Low parasitic inductance multi-chip SiC devices packaging technology

Li, Jianfeng; Mouawad, Bassem; Castellazzi, Alberto; Friedrichs, Peter; Johnson, Christopher Mark

Abstract

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented.

Citation

Li, J., Mouawad, B., Castellazzi, A., Friedrichs, P., & Johnson, C. M. (in press). Low parasitic inductance multi-chip SiC devices packaging technology.

• Conference Name: 18th European Conference on Power Electronics and Applications
• End Date: Sep 9, 2016
• Acceptance Date: Mar 1, 2016
• Deposit Date: Oct 3, 2016
• Peer Reviewed: Peer Reviewed
• Keywords: Wide bandgap devices, High frequency power converter, Silicon Carbide (SiC), Packaging, high voltage power converters, JFET, Wind energy
• Public URL: https://nottingham-repository.worktribe.com/output/774488
• Related Public URLs: http://www.epe2016.com/