Hybrid half-bridge package for high voltage application

Mouawad, Bassem; Li, Jianfeng; Castellazzi, Alberto; Johnson, Christopher Mark

Abstract

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.

Citation

Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. Hybrid half-bridge package for high voltage application. Presented at 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

• Conference Name: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• End Date: Jun 16, 2016
• Acceptance Date: Dec 14, 2015
• Deposit Date: Oct 3, 2016
• Peer Reviewed: Peer Reviewed
• Keywords: Half-Bridge, 3-D Packaging, Power Electronics, High Voltage, Si IGBT, SiC Diodes
• Public URL: https://nottingham-repository.worktribe.com/output/769366
• Publisher URL: http://ieeexplore.ieee.org/document/7520799/?arnumber=7520799
• Additional Information: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.; doi:10.1109/ISPSD.2016.7520799
• Contract Date: Oct 3, 2016