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Hybrid half-bridge package for high voltage application

Mouawad, Bassem; Li, Jianfeng; Castellazzi, Alberto; Johnson, Christopher Mark

Authors

Bassem Mouawad ezzbm1@exmail.nottingham.ac.uk

Jianfeng Li

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Christopher Mark Johnson mark.johnson@nottingham.ac.uk



Abstract

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.

Peer Reviewed Peer Reviewed
APA6 Citation Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Hybrid half-bridge package for high voltage application
Keywords Half-Bridge, 3-D Packaging, Power Electronics, High Voltage, Si IGBT, SiC Diodes
Publisher URL http://ieeexplore.ieee.org/document/7520799/?arnumber=7520799
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
doi:10.1109/ISPSD.2016.7520799

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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