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Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment

Li, Jianfeng; Agyakwa, Pearl; Johnson, Christopher Mark

Authors

Jianfeng Li eezjl@exmail.nottingham.ac.uk

Pearl Agyakwa

Christopher Mark Johnson mark.johnson@nottingham.ac.uk

Abstract

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Journal Article Type Article
Publication Date Apr 1, 2014
Journal Journal of Electronic Materials
Print ISSN 0361-5235
Electronic ISSN 0361-5235
Publisher Humana Press
Peer Reviewed Peer Reviewed
Volume 43
Issue 4
Institution Citation Li, J., Agyakwa, P., & Johnson, C. M. (2014). Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment. Journal of Electronic Materials, 43(4), doi:10.1007/s11664-013-2971-7
DOI https://doi.org/10.1007/s11664-013-2971-7
Keywords Transient liquid phase (TLP) bonding; Die attachment; Diffusion; Interfacial reaction; Intermetallic compounds; Solid solution
Publisher URL http://link.springer.com/article/10.1007/s11664-013-2971-7
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
Additional Information c2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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