All Outputs (23)

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement (2024)
Journal Article

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate bipolar transistors are particularly interesting as t... Read More about Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement.

Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design (2023)
Conference Proceeding

This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Conference Proceeding

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency (2023)
Journal Article

10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of... Read More about 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency.

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive (2022)
Conference Proceeding

In this paper a Lumped Parameter Thermal Network (LPTN) is proposed for a Yokeless and Segmented Armature (YASA) axial flux permanent magnet (AFPM) machine. A simulation model is used to examine the machine in isolation, with an Integrated Motor Driv... Read More about Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive.

Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules (2021)
Conference Proceeding

Energy innovation trends such as sustainable grids, and the electrification of the consumer transportation market are accelerating the adoption of medium-voltage (MV) silicon-carbide (SiC) technology. The fast switching times and higher operating tem... Read More about Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models (2020)
Conference Proceeding

We present an innovative method to allow real-time visualisation of temperature fields on power electronic circuits using augmented reality. A real-time time-domain simulation incorporating the Block Arnoldi model order reduction techniques is implem... Read More about Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models.

Multi?frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability (2020)
Journal Article

© The Institution of Engineering and Technology 2020. Geographically distributed hardware-in-the-loop (HIL) testing has the potential to allow hybrid vehicle powertrain components (battery, motor drive, and engine) to be developed at geographically r... Read More about Multi?frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability.

Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter (2020)
Journal Article

Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to red... Read More about Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Conference Proceeding

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Conference Proceeding

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Conference Proceeding

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.