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Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules (2018)
Conference Proceeding

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance character... Read More about Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints (2018)
Journal Article

The power cycling reliability of flexible printed circuit board (PCB) interconnect smaller/thinner (ST) 9.5 mm × 5.5 mm × 0.07 mm and larger/thicker (LT) 13.5 mm × 13.5 mm × 0.5 mm single Si diode samples have been studied. With the assumption of cre... Read More about Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors (2018)
Journal Article

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MO... Read More about Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

A new analysis for finding the optimum power rating of low voltage distribution power electronics based on statistics and probabilities (2017)
Conference Proceeding

The continuing trend toward heavier load and high penetration of Distribution Generation (DG) units in low voltage rural distribution feeders requires power electronic-based solution alternatives for voltage regulation purposes. The design of power e... Read More about A new analysis for finding the optimum power rating of low voltage distribution power electronics based on statistics and probabilities.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Suppression of electromagnetic interference using screening and shielding techniques within switching cells (2017)
Conference Proceeding

in this paper we introduce the use of combination of screening and shielding to suppress electromagnetic interference (EMI) generated by a switching cell. We investigate the screening of common mode (CM) currents and the shielding of magnetic fields... Read More about Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network (2016)
Conference Proceeding

This paper presents a novel resonant based, high power density power electronics converter solution for mid-feeder voltage regulation of a low voltage (LV) distribution network. Owing to the use of high switching frequency operation and a full soft-s... Read More about A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network.