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Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

Yang, Li; Agyakwa, Pearl; Corfield, Martin; Johnson, Mark; Harris, Anne; Packwood, Matthew; Paciura, Krzysztof

Authors

Li Yang

MARK JOHNSON mark.johnson@nottingham.ac.uk
Professor of Advanced Power Conversion

Anne Harris

Matthew Packwood

Krzysztof Paciura



Abstract

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used to evaluate key degradation mechanisms. The forward voltage drop of the body diode is used as a thermo-sensitive electrical parameter to estimate the junction temperature and the thermal structure function is analysed to elucidate the degradation in the heat flow path inside the module. Comparisons are made with commercial Si IGBT power modules.

Citation

Yang, L., Agyakwa, P., Corfield, M., Johnson, M., Harris, A., Packwood, M., & Paciura, K. (2018). Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

Conference Name 10th International Conference on Integrated Power Electronics (CIPS 2018)
End Date Mar 23, 2018
Acceptance Date Oct 11, 2017
Publication Date Mar 20, 2018
Deposit Date May 15, 2018
Peer Reviewed Peer Reviewed
Public URL http://eprints.nottingham.ac.uk/id/eprint/51806
Related Public URLs https://www.vde-verlag.de/proceedings-de/454540034.html
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf