Design and development of a high-density, high-speed 10 kV SiC MOSFET module

Di Marino, Christina; Boroyevich, Dushan; Burgos, Rolando; Johnson, Christopher Mark; Lu, G.-Q.

Abstract

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic, thermal, and mechanical analyses, the electric fields must also be evaluated. This is the first detailed report on the optimization of a high-voltage SiC MOSFET power module.

Citation

Di Marino, C., Boroyevich, D., Burgos, R., Johnson, C. M., & Lu, G.-Q. (2017). Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

• Conference Name: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
• End Date: Sep 14, 2017
• Acceptance Date: Mar 1, 2017
• Online Publication Date: Nov 9, 2017
• Publication Date: Sep 11, 2017
• Deposit Date: Jan 23, 2018
• Publicly Available Date: Jan 23, 2018
• Peer Reviewed: Peer Reviewed
• Keywords: Silicon Carbide (SiC), Packaging, High power density systems, High voltage power converters, MOSFET
• Public URL: https://nottingham-repository.worktribe.com/output/881778
• Publisher URL: http://ieeexplore.ieee.org/document/8099109/
• Additional Information: doi:10.23919/EPE17ECCEEurope.2017.8099109 ; ISBN:978907581527; © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
• Contract Date: Jan 23, 2018