MARK JOHNSON's Outputs (27)

Development and Validation of a Smart Architecture for Thyristor Valves (2023)
Journal Article
Sala, G., De Bonis, G., Costabeber, A., Tani, A., Johnson, C. M., & Clare, J. C. (2023). Development and Validation of a Smart Architecture for Thyristor Valves. IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 4068-4076. https://doi.org/10.1109/JESTPE.2023.3262344

A high voltage thyristor converter is realized by many valve sections, whose volume is approximately occupied for only the 10% by thyristors and for the 10% by the relevant gate drivers. The remaining 80% is taken by passive auxiliary circuits, neede... Read More about Development and Validation of a Smart Architecture for Thyristor Valves.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability (2020)
Journal Article
Sen, S., Evans, P. L., & Johnson, C. M. (2020). Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability. IET Electrical Systems in Transportation, 10(3), 268-274. https://doi.org/10.1049/iet-est.2019.0043

© The Institution of Engineering and Technology 2020. Geographically distributed hardware-in-the-loop (HIL) testing has the potential to allow hybrid vehicle powertrain components (battery, motor drive, and engine) to be developed at geographically r... Read More about Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability.

Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter (2020)
Journal Article
Li, K., Videt, A., Idir, N., Evans, P., & Johnson, M. (2020). Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter. IEEE Transactions on Power Electronics, 35(9), 9652-9662. https://doi.org/10.1109/TPEL.2019.2961604

Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to red... Read More about Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Presentation / Conference Contribution
Sen, S., Evans, P. L., & Johnson, C. M. (2018). Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation. In Proceedings - 2018 IEEE Vehicle Power and Propulsion Conference (VPPC) (1-6). https://doi.org/10.1109/VPPC.2018.8604967

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices (2018)
Journal Article
Johnson, M., Wilson, P. R., Empringham, L., & De Lillo, L. (2018). IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices. IEEE Power Electronics Magazine, 5(2), 26-33. https://doi.org/10.1109/mpel.2018.2822246

The International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) has four distinct technical working groups, each providing its own perspective on the technology and industrial drivers for the adoption of wide-bandgap (WBG) power sem... Read More about IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices.

Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure (2017)
Journal Article
Zhang, H., Li, J., Dai, J., Corfield, M., Liu, X., Liu, Y., Huang, Z., & Johnson, C. M. (2018). Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure. IEEE Journal of Emerging and Selected Topics in Power Electronics, 6(1), 175-187. https://doi.org/10.1109/jestpe.2017.2758901

This paper proposes an advanced Si3N4 ceramic-based structure with through vias designed and filled with brazing alloy as a reliable interconnect solution in planar power modules. Finite element (FE) modeling and simulation were first used to predict... Read More about Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

Design and development of a high-density, high-speed 10 kV SiC MOSFET module (2017)
Presentation / Conference Contribution
Di Marino, C., Boroyevich, D., Burgos, R., Johnson, C. M., & Lu, G.-Q. (2017). Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MO... Read More about Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (in press). Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Time-efficient sintering processes to attach power devices using nanosilver dry film (2017)
Presentation / Conference Contribution
Dai, J., Li, J., Agyakwa, P., & Mark Johnson, C. (2017). Time-efficient sintering processes to attach power devices using nanosilver dry film. Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2017(HiTEN), 000207–000212. https://doi.org/10.4071/2380-4491.2017.hiten.207

Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an... Read More about Time-efficient sintering processes to attach power devices using nanosilver dry film.

Suppression of electromagnetic interference using screening and shielding techniques within switching cells (2017)
Presentation / Conference Contribution
Zhang, Z., & Johnson, C. M. (2017). Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

in this paper we introduce the use of combination of screening and shielding to suppress electromagnetic interference (EMI) generated by a switching cell. We investigate the screening of common mode (CM) currents and the shielding of magnetic fields... Read More about Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages (2017)
Journal Article
Eleffendi, M. A., & Johnson, C. M. (2017). In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages. IEEE Transactions on Power Electronics, 32(9), 7187-7198. https://doi.org/10.1109/TPEL.2016.2628705

Wire-bond lift-off and Solder fatigue are degradation mechanisms that dominate the lifetime of power semiconductor packages. Although their lifetime is commonly estimated at the design stage, based on mission profiles and Physics-of-Failure models, t... Read More about In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (2016). SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (2016). SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (2016). Developing power semiconductor device model for virtual prototyping of power electronics systems.

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling.

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Real-time deterministic power flow control through dispatch of distributed energy resources (2015)
Journal Article
Fazeli, A., Sumner, M., Johnson, C. M., & Christopher, E. (2015). Real-time deterministic power flow control through dispatch of distributed energy resources. IET Generation, Transmission and Distribution, 9(16), https://doi.org/10.1049/iet-gtd.2015.0182

Integration of intermittent renewable resources and mass electrification of heat and transport into the existing electricity network, with limited network asset reinforcement requires incorporation of intelligence in form of active management of flex... Read More about Real-time deterministic power flow control through dispatch of distributed energy resources.

Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules (2015)
Journal Article
Eleffendi, M. A., & Johnson, C. M. (2016). Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules. IEEE Transactions on Power Electronics, 31(2), 1576-1587. https://doi.org/10.1109/TPEL.2015.2418711

Knowledge of instantaneous junction temperature is essential for effective health management of power converters, enabling safe operation of the power semiconductors under all operating conditions. Methods based on fixed thermal models are typically... Read More about Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules.

Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid (2015)
Presentation / Conference Contribution
Fazeli, A., Sumner, M., Johnson, C. M., & Christopher, E. (2015). Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

The electrification of heat and transport in addition to integration of intermittent renewable resources into the existing electricity network is expected to occur in near future. Such a transformation is expected to force the operation of the electr... Read More about Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

A novel stochastic modelling approach for electric vehicle charging power and energy requirements (2015)
Presentation / Conference Contribution
Fazeli, A., Johnson, C. M., Sumner, M., & Christopher, E. (2015). A novel stochastic modelling approach for electric vehicle charging power and energy requirements.

Electrification of heat and transport in addition to integration of intermittent renewable resources into the existing electricity network is expected to occur in near future. Such a transformation is expected to force the operation of the electricit... Read More about A novel stochastic modelling approach for electric vehicle charging power and energy requirements.

Calibration of a novel microstructural damage model for wire bonds (2014)
Journal Article
Yang, L., Agyakwa, P., & Johnson, C. (2014). Calibration of a novel microstructural damage model for wire bonds. IEEE Transactions on Device and Materials Reliability, 14(4), 989-994. https://doi.org/10.1109/TDMR.2014.2354739

In a previous paper, a new time-domain damage-based physics model was proposed for the lifetime prediction of wire bond interconnects in power electronic modules. Unlike cycle-dependent life prediction methodologies, this model innovatively incorpora... Read More about Calibration of a novel microstructural damage model for wire bonds.

Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods (2014)
Journal Article
Arjmand, E., Agyakwa, P. A., & Johnson, C. M. (2014). Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods. Microelectronics Reliability, 54(9-10), https://doi.org/10.1016/j.microrel.2014.07.119

The effect of bonding parameters on the reliability of thick Al wire bond is investigated. Samples were prepared with 25 different designs with 5 different bonding parameters such as time, ultrasonic power, begin- force, end-force and touch-down step... Read More about Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods.

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles (2014)
Journal Article
Li, J., Johnson, C. M., Buttay, C., Sabbah, W., & Azzopardi, S. (2015). Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles. Journal of Materials Processing Technology, 215, 299-308. https://doi.org/10.1016/j.jmatprotec.2014.08.002

3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 μm thick NiP\Au finish. The effect of prepar... Read More about Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles.

Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. M. (2014). Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes

This communication introduces a modification to the Wagner method to reveal and correct considerable systematic errors existing in the previously established analytical methods used to calculate the interdiffusion coefficients of binary multiphase sy... Read More about Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes.

Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices (2013)
Journal Article
Teerakawanich, N., & Johnson, C. M. (2014). Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices. IEEE Transactions on Power Electronics, 29(6), 2705-2714. https://doi.org/10.1109/TPEL.2013.2274158

This paper presents a new gate drive circuit for driving a series string of insulated-gate bipolar transistors (IGBTs). The proposed quasi-active gate control (QAGC) circuit is simple to implement as it consists of only a few passive components in ad... Read More about Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices.