MARK JOHNSON mark.johnson@nottingham.ac.uk
Professor of Advanced Power Conversion
IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices
Johnson, Mark; Wilson, Peter R.; Empringham, Lee; De Lillo, Liliana
Authors
Peter R. Wilson
LEE EMPRINGHAM lee.empringham@nottingham.ac.uk
Professor of Power Conversion Technologies
LILIANA DE LILLO Liliana.De_lillo@nottingham.ac.uk
Principal Research Fellow
Abstract
The International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) has four distinct technical working groups, each providing its own perspective on the technology and industrial drivers for the adoption of wide-bandgap (WBG) power semiconductors in power electronics. This article summarizes the progress toward an initial roadmap for the packaging and integration working group of the ITRW.
Citation
Johnson, M., Wilson, P. R., Empringham, L., & De Lillo, L. (2018). IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices. IEEE Power Electronics Magazine, 5(2), 26-33. https://doi.org/10.1109/mpel.2018.2822246
Journal Article Type | Article |
---|---|
Acceptance Date | Apr 26, 2018 |
Online Publication Date | Jun 18, 2018 |
Publication Date | Jun 18, 2018 |
Deposit Date | Jan 9, 2019 |
Publicly Available Date | Jan 10, 2019 |
Journal | IEEE Power Electronics Magazine |
Print ISSN | 2329-9207 |
Electronic ISSN | 2329-9215 |
Peer Reviewed | Peer Reviewed |
Volume | 5 |
Issue | 2 |
Pages | 26-33 |
DOI | https://doi.org/10.1109/mpel.2018.2822246 |
Keywords | Control and Systems Engineering; Electrical and Electronic Engineering; Energy Engineering and Power Technology |
Public URL | https://nottingham-repository.worktribe.com/output/1459971 |
Publisher URL | https://ieeexplore.ieee.org/document/8387491 |
Files
IEEE ITRW Working Group Position Paper-Packaging And Integration Unlocking The Full Potential Of Wide-Bandgap Devices
(3.4 Mb)
PDF
You might also like
Packaging technology for a highly integrated 10kV SiC MOSFET module
(2018)
Presentation / Conference
Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
(2018)
Conference Proceeding
Cost effective direct-substrate jet impingement cooling concept for power application
(2018)
Conference Proceeding
A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field
(2018)
Conference Proceeding