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Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates (2020)
Journal Article

This work investigates the effect of the thickness of the epitaxial layer (100 nm and 1 ?m) on the optical properties of quaternary GaAs0.1P0.89N0.01 alloys. Furthermore, the effect of rapid thermal annealing (RTA) on their properties has been studie... Read More about Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates.

Effect of thermal annealing on the opticaland structural properties of (311)B and(001) GaAsBi/GaAs single quantum wellsgrown by MBE (2020)
Journal Article

The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1 − xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural... Read More about Effect of thermal annealing on the opticaland structural properties of (311)B and(001) GaAsBi/GaAs single quantum wellsgrown by MBE.

Structural, optical and electrical properties of electron beam evaporated TiOxNy films as selective solar absorber coatings (2020)
Journal Article

Titanium oxinitride (TiOxNy) solar absorber coatings were deposited at different oxygen partial pressures onto Cu, Si and glass substrates using electron beam evaporation technique. XRD diffraction patterns evidenced (111), (200) and (220) orientatio... Read More about Structural, optical and electrical properties of electron beam evaporated TiOxNy films as selective solar absorber coatings.

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer (2019)
Journal Article

We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoe... Read More about A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer.

The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction (2019)
Journal Article

In this work, we investigate the forward current-voltage characteristics of p-type Ti/Au/Al0.29Ga0.71As Schottky diode, which were measured over a range of temperatures from 260 to 400 K. The experimental current-voltage characteristics are used to e... Read More about The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction.

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures (2019)
Journal Article

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-L... Read More about Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures.

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor (2019)
Journal Article

© 2020 The Royal Society of Chemistry. This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 c... Read More about A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor.

Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys (2019)
Journal Article

Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of character... Read More about Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys.

Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes (2018)
Journal Article

© 2018 IOP Publishing Ltd. In this work, we investigate the mechanisms that control the electroluminescence from p-i-n heterostructures containing self-assembled In 0.5 Ga 0.5 As quantum dots embedded inside a GaAs/Al 0.3 Ga 0.7 As quantum well as a... Read More about Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes.

Optical Properties of GaAs1?xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates (2018)
Journal Article

In this work, the electronic bandstructure of GaAs1?xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 ? x ? 0.0215) and subst... Read More about Optical Properties of GaAs1?xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates.

Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy (2018)
Journal Article

© 2018 American Physical Society. We show how photocapacitance spectra can probe and manipulate two dimensional excitonic complexes and Fermi-edge singularities as a function of applied bias even at a temperature of 100 K. For lower density regimes (... Read More about Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy.

Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices (2018)
Journal Article

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and... Read More about Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices.

Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications (2018)
Journal Article

We have investigated the electrical and optical properties of erbium (Er3+) doped TiO2 thin films (Er:TiO2 TFs) grown by sol–gel technique on glass and silicon substrates. The samples were characterized by field emission gun–scanning electron microsc... Read More about Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications.

Evaluation on La2O3 garlanded ceria heterostructured binary metal oxide nanoplates for UV/ visible light induced removal of organic dye from urban wastewater (2018)
Journal Article

A low energy bandgap between Ce3+ and Ce4+ states in cerium oxides, high oxygen mobility and high oxygen storage capacity are the properties that qualify them to be the most widely used heterogeneous catalysts. This present work is an account of stud... Read More about Evaluation on La2O3 garlanded ceria heterostructured binary metal oxide nanoplates for UV/ visible light induced removal of organic dye from urban wastewater.

Exciton localization and structural disorder of GaAs1?xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Journal Article

In this work, we have investigated the structural and optical properties of GaAs(1?x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Ram... Read More about Exciton localization and structural disorder of GaAs1?xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates.

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films (2018)
Journal Article

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Ra... Read More about Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films.

Revealing the nature of low temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers (2018)
Journal Article

Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand... Read More about Revealing the nature of low temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers.