Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih, H A; Albalawi, H; Henini, M

Abstract

© 2019 IOP Publishing Ltd. The effect of rapid thermal annealing on the electrical properties of p++GaP/p-GaAsPN/n+GaP diodes were investigated by using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques in the temperature range from 100 K to 440 K. It was observed that rapid thermal annealing treatment improves the electrical characteristics of as-grown structures. The annealed samples showed an ideality factor lower than the as-grown samples for all temperatures. The ideality factor values from I-V characteristics has changed between 6.8 and 1.9 in the temperature range of 110-430 K for as grown diode, and between 6.3 and 1.44 in the temperature range 100-400 K for the annealed diode. On the other hand, the barrier height increases and the ideality factor decreases with increasing temperature for all samples. The barrier height values has changed between 0.29 eV and 0.71 eV in the temperature range of 190-430 K for as grown diode, and between 0.38 eV and 0.77 eV in the temperature range 180-420 K for the annealed diode. High values of barrier heights were observed in the annealed samples due to the barrier height in-homogeneities at the p-i-n junction. The net acceptor concentration was calculated to be 1.18 × 1018 cm-3 and 2.11 × 1018 cm-3 for the as-grown and annealed GaAsPN layers, respectively. The net acceptor concentration increases by and the leakage current of the GaAsPN/GaP p-i-n junction decreases by 1-2 orders after RTA. DLTS and Laplace-DLTS measurements reveal three hole traps, H1an(0.06 eV), H2an(0.065 eV) and H3(0.23 eV) in the annealed samples as compared with two hole traps, H4ag(0.07 eV) and H5(0.25 eV) in the as-grown samples. After rapid thermal annealing an extra shallow trap is created.

Citation

Alburaih, H. A., Albalawi, H., & Henini, M. (2019). Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes. Semiconductor Science and Technology, 34(10), Article 105009. https://doi.org/10.1088/1361-6641/ab3671

• Journal Article Type: Article
• Acceptance Date: Jul 29, 2019
• Online Publication Date: Sep 12, 2019
• Publication Date: 2019-10
• Deposit Date: Sep 24, 2019
• Publicly Available Date: Sep 13, 2020
• Journal: Semiconductor Science and Technology
• Print ISSN: 0268-1242
• Electronic ISSN: 1361-6641
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 34
• Issue: 10
• Article Number: 105009
• DOI: https://doi.org/10.1088/1361-6641/ab3671
• Keywords: Electrical and Electronic Engineering; Materials Chemistry; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
• Public URL: https://nottingham-repository.worktribe.com/output/2655803
• Publisher URL: https://iopscience.iop.org/article/10.1088/1361-6641/ab3671
• Additional Information: Journal title: Semiconductor Science and Technology; Article type: paper; Article title: Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes; Copyright information: © 2019 IOP Publishing Ltd; Date received: 2019-04-27; Date accepted: 2019-07-29; Online publication date: 2019-09-12
• Contract Date: Sep 25, 2019