Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Bachir Bouiadjra, Wadi; Kadaoui, Mustapha Amine; Saidane, Abdelkader; Shafi, Muhammad; Al mashary, Faisal S.; Al huwayz, Maryam; Alotaibi, Saud; Almalki, Abdulaziz; Alhassan, Sultan; Henini, Mohamed

Abstract

Electrical characteristics of as-grown and hydrogen-irradiated GaAsN Schottky diodes having different contents of nitrogen (N = 0–1.2%) have been investigated. In this work, the effect of hydrogen irradiation on the electrical properties of Schottky diodes has been studied. Current–Voltage, Capacitance–Voltage and Capacitance–Voltage–Frequency measurements were analysed along with the previously reported DLTS and Laplace results. It was found that the reverse saturation current for all hydrogen-irradiated Schottky diodes increased as compared to the as-grown devices, which is attributed to high densities of several trap levels that have activation energies higher than 0.50 eV. The density of ionized donors Nd in as-grown samples (0.2% N) has been found to decrease from 1.52 × 1016 cm−3 to 1.12 × 1016 cm−3 in hydrogen-irradiated samples. An unexpected behaviour of conductance is observed along with a drastic increase of capacitance due to the high leakage current. The analysis for the existence of higher densities of deep trap levels which leads to higher peak values of capacitance at low frequencies is presented in this investigation.

Citation

Bachir Bouiadjra, W., Kadaoui, M. A., Saidane, A., Shafi, M., Al mashary, F. S., Al huwayz, M., Alotaibi, S., Almalki, A., Alhassan, S., & Henini, M. (2024). Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes. Journal of Materials Science: Materials in Electronics, 35(28), Article 1885. https://doi.org/10.1007/s10854-024-13584-3

• Journal Article Type: Article
• Acceptance Date: Sep 19, 2024
• Online Publication Date: Oct 9, 2024
• Publication Date: 2024-10
• Deposit Date: Oct 14, 2024
• Publicly Available Date: Oct 10, 2025
• Journal: Journal of Materials Science: Materials in Electronics
• Print ISSN: 0957-4522
• Electronic ISSN: 1573-482X
• Publisher: Springer Verlag
• Peer Reviewed: Peer Reviewed
• Volume: 35
• Issue: 28
• Article Number: 1885
• DOI: https://doi.org/10.1007/s10854-024-13584-3
• Public URL: https://nottingham-repository.worktribe.com/output/40573280
• Publisher URL: https://link.springer.com/article/10.1007/s10854-024-13584-3
• Additional Information: Received: 25 July 2024; Accepted: 19 September 2024; First Online: 9 October 2024; : ; : The authors have no relevant financial or non-financial interests to disclose.