Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

Djeglouf, Asmaa; Hamri, Djillali; Teffahi, Abdelkader; Saidane, Abdelkader; Al Mashary, Faisal S.; Al Huwayz, Maryam M.; Henini, Mohamed; Orak, Ikram; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.

Abstract

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and 50 nm thicknesses leading to two structures named Low Indium Doped (LID) sample and High Indium Doped (HID) sample, respectively. XRD analysis shows no diffraction pattern related to Indium indicating that In has been incorporated into the TiO2 lattice. Current-Voltage (I-V) characteristics show that rectification ratio at 2V is higher for HID sample than for LID sample. Evaluated barrier height, ϕB0 , decreased while the ideality factor, n, increased with decreasing temperature. Such behavior is ascribed to barrier inhomogeneity that was assumed to have a Gaussian Distribution (GD) of barrier heights at interface. Evidence of such GD was confirmed by plotting ϕB0versus n. High value of mean barrier ϕ̅B0 and lower value of standard deviation (σ) of HID structure are due to indium doping which increases the barrier homogeneities. Finally, estimated Richardson constants A* are in good agreement with theoretic values (112 A/cm2K2), particularly, for the HID structure.

Citation

Djeglouf, A., Hamri, D., Teffahi, A., Saidane, A., Al Mashary, F. S., Al Huwayz, M. M., Henini, M., Orak, I., Albadri, A. M., & Alyamani, A. Y. (2019). Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. Journal of Alloys and Compounds, 775, 202-213. https://doi.org/10.1016/j.jallcom.2018.10.048

• Journal Article Type: Article
• Acceptance Date: Oct 6, 2018
• Online Publication Date: Oct 9, 2018
• Publication Date: Feb 15, 2019
• Deposit Date: Oct 15, 2018
• Publicly Available Date: Oct 10, 2019
• Journal: Journal of Alloys and Compounds
• Print ISSN: 0925-8388
• Electronic ISSN: 1873-4669
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 775
• Pages: 202-213
• DOI: https://doi.org/10.1016/j.jallcom.2018.10.048
• Keywords: Indium doped TiO2; Thermionic emission; Schottky barrier height; Electrical characterization; Temperature effect
• Public URL: https://nottingham-repository.worktribe.com/output/1167295
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0925838818337149?via%3Dihub
• Contract Date: Oct 16, 2018