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Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

Djeglouf, Asmaa; Hamri, Djillali; Teffahi, Abdelkader; Saidane, Abdelkader; Al Mashary, Faisal S.; Al Huwayz, Maryam M.; Henini, Mohamed; Orak, Ikram; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.

Authors

Asmaa Djeglouf

Djillali Hamri

Abdelkader Teffahi

Abdelkader Saidane

Faisal S. Al Mashary

Maryam M. Al Huwayz

Ikram Orak

Abdulrahman M. Albadri

Ahmed Y. Alyamani



Abstract

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and 50 nm thicknesses leading to two structures named Low Indium Doped (LID) sample and High Indium Doped (HID) sample, respectively. XRD analysis shows no diffraction pattern related to Indium indicating that In has been incorporated into the TiO2 lattice. Current-Voltage (I-V) characteristics show that rectification ratio at 2V is higher for HID sample than for LID sample. Evaluated barrier height, ϕB0 , decreased while the ideality factor, n, increased with decreasing temperature. Such behavior is ascribed to barrier inhomogeneity that was assumed to have a Gaussian Distribution (GD) of barrier heights at interface. Evidence of such GD was confirmed by plotting ϕB0versus n. High value of mean barrier ϕ̅B0 and lower value of standard deviation (σ) of HID structure are due to indium doping which increases the barrier homogeneities. Finally, estimated Richardson constants A* are in good agreement with theoretic values (112 A/cm2K2), particularly, for the HID structure.

Journal Article Type Article
Publication Date Feb 15, 2019
Journal Journal of Alloys and Compounds
Electronic ISSN 1873-4669
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 775
Pages 202-213
APA6 Citation Djeglouf, A., Hamri, D., Teffahi, A., Saidane, A., Al Mashary, F. S., Al Huwayz, M. M., …Alyamani, A. Y. (2019). Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. Journal of Alloys and Compounds, 775, (202-213). doi:10.1016/j.jallcom.2018.10.048. ISSN 1873-4669
DOI https://doi.org/10.1016/j.jallcom.2018.10.048
Keywords Indium doped TiO2; Thermionic emission; Schottky barrier height; Electrical characterization; Temperature effect
Publisher URL https://www.sciencedirect.com/science/article/pii/S0925838818337149?via%3Dihub

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