Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes
(2018)
Journal Article
© 2018 IOP Publishing Ltd. In this work, we investigate the mechanisms that control the electroluminescence from p-i-n heterostructures containing self-assembled In 0.5 Ga 0.5 As quantum dots embedded inside a GaAs/Al 0.3 Ga 0.7 As quantum well as a... Read More about Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes.