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Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes

Galeti, H.V.A.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.

Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes Thumbnail


Authors

H.V.A. Galeti

Y. Galvao Gobato

M.J.S.P. Brasil

D. Taylor



Abstract

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect.

Citation

Galeti, H., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (in press). Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47(3), https://doi.org/10.1007/s11664-018-6065-4

Journal Article Type Article
Acceptance Date Jan 4, 2018
Online Publication Date Jan 16, 2018
Deposit Date Jan 23, 2018
Publicly Available Date Jan 17, 2019
Journal Journal of Electronic Materials
Print ISSN 0361-5235
Electronic ISSN 1543-186X
Publisher Springer Verlag
Peer Reviewed Peer Reviewed
Volume 47
Issue 3
DOI https://doi.org/10.1007/s11664-018-6065-4
Keywords Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence
Public URL https://nottingham-repository.worktribe.com/output/905693
Publisher URL https://link.springer.com/article/10.1007%2Fs11664-018-6065-4
Additional Information This is a post-peer-review, pre-copyedit version of an article published in Journal of Electronic Materials. The final authenticated version is available online at: http://dx.doi.org/10.1007/s11664-018-6065-4

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