H.V.A. Galeti
Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes
Galeti, H.V.A.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.
Authors
Y. Galvao Gobato
M.J.S.P. Brasil
D. Taylor
Professor MOHAMED HENINI MOHAMED.HENINI@NOTTINGHAM.AC.UK
PROFESSOR OF APPLIED PHYSICS
Abstract
We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect.
Citation
Galeti, H., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (in press). Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47(3), https://doi.org/10.1007/s11664-018-6065-4
Journal Article Type | Article |
---|---|
Acceptance Date | Jan 4, 2018 |
Online Publication Date | Jan 16, 2018 |
Deposit Date | Jan 23, 2018 |
Publicly Available Date | Jan 17, 2019 |
Journal | Journal of Electronic Materials |
Print ISSN | 0361-5235 |
Electronic ISSN | 1543-186X |
Publisher | Springer Verlag |
Peer Reviewed | Peer Reviewed |
Volume | 47 |
Issue | 3 |
DOI | https://doi.org/10.1007/s11664-018-6065-4 |
Keywords | Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence |
Public URL | https://nottingham-repository.worktribe.com/output/905693 |
Publisher URL | https://link.springer.com/article/10.1007%2Fs11664-018-6065-4 |
Additional Information | This is a post-peer-review, pre-copyedit version of an article published in Journal of Electronic Materials. The final authenticated version is available online at: http://dx.doi.org/10.1007/s11664-018-6065-4 |
Contract Date | Jan 23, 2018 |
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