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Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling (2024)
Journal Article
Agyakwa, P. A., Robertson, S., Dai, J., Mouawad, B., Zhou, Z., Liu, C., & Johnson, C. M. (2024). Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling. Journal of Electronic Materials, 53, 1374–1398. https://doi.org/10.1007/s11664-023-10870-4

This paper deals with the performance of sintered nano-silver bonds used as wide-bandgap power module die attachment technology. The paper specifically explores the fine-scale microstructures of highly porous sintered attachments under power cycling... Read More about Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling.

1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application (2023)
Presentation / Conference Contribution
De Giorgio, M., Li, K., Marchant, S., de Lillo, L., Empringham, L., Serafianos, D., Lea, J., Brockway, S., & Johnson, M. (2023, November). 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application. Presented at 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP), Florianopolis, Brazil

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB... Read More about 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application.

Development and Validation of a Smart Architecture for Thyristor Valves (2023)
Journal Article
Sala, G., De Bonis, G., Costabeber, A., Tani, A., Johnson, C. M., & Clare, J. C. (2023). Development and Validation of a Smart Architecture for Thyristor Valves. IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 4068-4076. https://doi.org/10.1109/JESTPE.2023.3262344

A high voltage thyristor converter is realized by many valve sections, whose volume is approximately occupied for only the 10% by thyristors and for the 10% by the relevant gate drivers. The remaining 80% is taken by passive auxiliary circuits, neede... Read More about Development and Validation of a Smart Architecture for Thyristor Valves.

Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process (2021)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2021). Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process. IEEE Transactions on Device and Materials Reliability, 21(4), 536-543. https://doi.org/10.1109/TDMR.2021.3118323

This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on a die bonder. A range of sintering parameters, reflecting different levels of manufacturability, were... Read More about Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process.

Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge (2021)
Journal Article
Stratta, A., Gottardo, D., Nardo, M. D., Espina, J., Lillo, L. D., Empringham, L., & Johnson, M. C. (2022). Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge. IEEE Transactions on Power Electronics, 37(1), 724-737. https://doi.org/10.1109/TPEL.2021.3094025

The application of wide-band gap semiconductors and their integration with other power electronics components (e.g., passives, gate drivers, sensing, thermal management) can meet the growing demand for volume reduction in power electronics systems. T... Read More about Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Shear strength of die attachments prepared using dry nanosilver film by a time-reduced sintering process (2020)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2020). Shear strength of die attachments prepared using dry nanosilver film by a time-reduced sintering process. Microelectronics Reliability, 111, Article 113740. https://doi.org/10.1016/j.microrel.2020.113740

This study investigates a time-reduced sintering process for die attachment, prepared, within a processing time of several seconds using dry nanosilver film. The effects of three main sintering parameters, sintering temperature (220 to 300 °C), sinte... Read More about Shear strength of die attachments prepared using dry nanosilver film by a time-reduced sintering process.

Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates (2020)
Journal Article
Stratta, A., Mouawad, B., Antonini, M., De Lillo, L., Empringham, L., & Johnson, M. C. (2021). Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates. IEEE Journal of Emerging and Selected Topics in Power Electronics, 9(4), 3867-3876. https://doi.org/10.1109/jestpe.2020.2989805

Heterogeneous integration and the converter in package concept have been highlighted as enabling technologies to unlock the full potential of silicon carbide (SiC) and gallium nitride (GaN) devices. Control of parasitic elements in the commutation lo... Read More about Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates.

Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability (2020)
Journal Article
Sen, S., Evans, P. L., & Johnson, C. M. (2020). Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability. IET Electrical Systems in Transportation, 10(3), 268-274. https://doi.org/10.1049/iet-est.2019.0043

© The Institution of Engineering and Technology 2020. Geographically distributed hardware-in-the-loop (HIL) testing has the potential to allow hybrid vehicle powertrain components (battery, motor drive, and engine) to be developed at geographically r... Read More about Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability.

Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter (2020)
Journal Article
Li, K., Videt, A., Idir, N., Evans, P., & Johnson, M. (2020). Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter. IEEE Transactions on Power Electronics, 35(9), 9652-9662. https://doi.org/10.1109/TPEL.2019.2961604

Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to red... Read More about Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter.

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field (2019)
Journal Article
DiMarino, C. M., Mouawad, B., Johnson, C. M., Boroyevich, D., & Burgos, R. (2020). 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field. IEEE Transactions on Power Electronics, 35(6), 6050-6060. https://doi.org/10.1109/tpel.2019.2952633

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. T... Read More about 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field.

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module (2019)
Journal Article
DiMarino, C., Mouawad, B., Johnson, C. M., Wang, M., Tan, Y.-S., Lu, G.-Q., Boroyevich, D., & Burgos, R. (2020). Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 381-394. https://doi.org/10.1109/jestpe.2019.2944138

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limi... Read More about Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module.

Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules (2019)
Journal Article
Agyakwa, P., Dai, J., Li, J., Mouawad, B., Yang, L., Corfield, M., & Johnson, C. (2019). Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules. Journal of Microscopy, 277(3), 140-153. https://doi.org/10.1111/jmi.12803

© 2019 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society. A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morp... Read More about Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules.

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Presentation / Conference Contribution
Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., Johnson, M., Wheeler, P., Gerada, C., Harris, A., & Packwood, M. (2018, September). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. Presented at 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Presentation / Conference Contribution
Sen, S., Evans, P. L., & Johnson, C. M. (2018, August). Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation. Presented at 2018 IEEE Vehicle Power and Propulsion Conference (VPPC), Chicago, IL, USA

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

Packaging technology for a highly integrated 10kV SiC MOSFET module (2018)
Presentation / Conference Contribution
Mouawad, B., Di Marino, C., Li, J., Skuriat, R., & Johnson, M. (2018, August). Packaging technology for a highly integrated 10kV SiC MOSFET module. Paper presented at 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However,... Read More about Packaging technology for a highly integrated 10kV SiC MOSFET module.

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system (2018)
Presentation / Conference Contribution
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018, May). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. Presented at 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.

IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices (2018)
Journal Article
Johnson, M., Wilson, P. R., Empringham, L., & De Lillo, L. (2018). IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices. IEEE Power Electronics Magazine, 5(2), 26-33. https://doi.org/10.1109/mpel.2018.2822246

The International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) has four distinct technical working groups, each providing its own perspective on the technology and industrial drivers for the adoption of wide-bandgap (WBG) power sem... Read More about IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Presentation / Conference Contribution
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., Boroyevich, D., & Burgos, R. (2018, June). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. Presented at PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.