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Study of a Silicon Carbide MOSFET power module to establish the benefits of adding anti-parallel Schottky diodes

Trentin, Andrew; Hind, David; Degano, Marco; Tighe, Christopher; Arevalo, Saul Lopez; Yang, Li; Johnson, Mark; Wheeler, Pat; Gerada, Christopher; Harris, Anne; Packwood, Matthew

Authors

David Hind

Marco Degano

Christopher Tighe

Li Yang

MARK JOHNSON mark.johnson@nottingham.ac.uk
Professor of Advancedpower Conversion

Anne Harris

Matthew Packwood



Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

Start Date Sep 23, 2018
Publication Date Sep 23, 2018
Publisher Institute of Electrical and Electronics Engineers
Book Title 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
ISBN 9781479973125
APA6 Citation Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET power module to establish the benefits of adding anti-parallel Schottky diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE)doi:10.1109/ecce.2018.8557415
DOI https://doi.org/10.1109/ecce.2018.8557415
Publisher URL https://ieeexplore.ieee.org/document/8557415

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