Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Trentin, Andrew; Hind, David; Degano, Marco; Tighe, Christopher; Arevalo, Saul Lopez; Yang, Li; Johnson, Mark; Wheeler, Pat; Gerada, Christopher; Harris, Anne; Packwood, Matthew

Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

Citation

Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (1829-1836). https://doi.org/10.1109/ECCE.2018.8557415

• Conference Name: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
• Conference Location: Portland, OR, USA
• Start Date: Sep 23, 2018
• End Date: Sep 27, 2018
• Acceptance Date: Apr 12, 2018
• Online Publication Date: Dec 6, 2018
• Publication Date: Sep 23, 2018
• Deposit Date: Feb 8, 2019
• Publicly Available Date: Feb 11, 2019
• Publisher: Institute of Electrical and Electronics Engineers
• Pages: 1829-1836
• Book Title: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
• ISBN: 9781479973132
• DOI: https://doi.org/10.1109/ECCE.2018.8557415
• Public URL: https://nottingham-repository.worktribe.com/output/1530265
• Publisher URL: https://ieeexplore.ieee.org/document/8557415