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Built-in reliability design of a high-frequency SiC MOSFET power module

Li, Jianfeng; Gurpinar, Emre; Lopez Arevalo, Saul; Castellazzi, Alberto; Mills, Liam

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Authors

Jianfeng Li

Emre Gurpinar

Alberto Castellazzi

Liam Mills



Abstract

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the materials, geometry and sizes of constituent parts which would maximize reliability. Following hardware development, functional tests were carried out, showing that the module is suitable for high switching frequency operation without impairing efficiency, thus enabling a considerable reduction of system-level size and weight.

Citation

Li, J., Gurpinar, E., Lopez Arevalo, S., Castellazzi, A., & Mills, L. (in press). Built-in reliability design of a high-frequency SiC MOSFET power module.

Conference Name 7th International Power Electronics Conference (IPEC Hiroshima 2014 ECCE- ASIA)
End Date May 21, 2014
Acceptance Date Jan 6, 2014
Online Publication Date Aug 7, 2014
Deposit Date Jul 17, 2017
Publicly Available Date Jul 17, 2017
Peer Reviewed Peer Reviewed
Keywords SiC MOSFET, multi-chip power modules, reliability.
Public URL https://nottingham-repository.worktribe.com/output/734433
Publisher URL http://ieeexplore.ieee.org/document/6870033/
Related Public URLs https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32002
Additional Information Published in: Proceedings of 2014 International Power Electronics Conference (IPEC Hiroshima 2014 - ECCE-ASIA). IEEE, 2014. ISBN 9781479927067. doi:10.1109/IPEC.2014.6870033

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