Packaging technology for a highly integrated 10kV SiC MOSFET module

Mouawad, Bassem; Di Marino, Christina; Li, Jianfeng; Skuriat, Robert; Johnson, Mark

Abstract

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However, it’s really essential to have a suitable packaging technology taking into account high electric fields concentrations, whilst maintaining compact commutation loops and effective thermal management. This paper describes the design and the fabrication of a wire-bond-less, highly integrated planar multi-chip 10 kV SiC MOSFET power module with stacked substrates, embedded decoupling capacitors and a high performance integrated thermal management system. Thermomechanical simulations were carried out to study the bending behaviour of these substrates during the sintering process.

Citation

Mouawad, B., Di Marino, C., Li, J., Skuriat, R., & Johnson, M. (2018, August). Packaging technology for a highly integrated 10kV SiC MOSFET module. Paper presented at 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic

• Presentation Conference Type: Conference Paper (unpublished)
• Conference Name: 14th International Seminar on Power Semiconductors (ISPS 2018)
• Start Date: Aug 29, 2018
• End Date: Aug 31, 2018
• Acceptance Date: Aug 1, 2018
• Publication Date: Aug 29, 2018
• Deposit Date: Sep 6, 2018
• Publicly Available Date: Sep 7, 2018
• Book Title: NA
• Chapter Number: NA
• ISBN: NA
• Keywords: Silicone carbide, packaging, high voltage, high density, SiC MOSFET, power module
• Public URL: https://nottingham-repository.worktribe.com/output/1062739
• Related Public URLs: http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/