Packaging technology for a highly integrated 10kV SiC MOSFET module

Mouawad, Bassem; Di Marino, Christina; Li, Jianfeng; Skuriat, Robert; Johnson, Mark

Abstract

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However, it’s really essential to have a suitable packaging technology taking into account high electric fields concentrations, whilst maintaining compact commutation loops and effective thermal management. This paper describes the design and the fabrication of a wire-bond-less, highly integrated planar multi-chip 10 kV SiC MOSFET power module with stacked substrates, embedded decoupling capacitors and a high performance integrated thermal management system. Thermomechanical simulations were carried out to study the bending behaviour of these substrates during the sintering process.

• Presentation Conference Type: Conference Paper (unpublished)
• Conference Name: 14th International Seminar on Power Semiconductors (ISPS 2018)
• Start Date: Aug 29, 2018
• End Date: Aug 31, 2018
• Acceptance Date: Aug 1, 2018
• Publication Date: Aug 29, 2018
• Deposit Date: Sep 6, 2018
• Publicly Available Date: Sep 7, 2018
• Book Title: NA
• Chapter Number: NA
• ISBN: NA
• Keywords: Silicone carbide, packaging, high voltage, high density, SiC MOSFET, power module
• Public URL: https://nottingham-repository.worktribe.com/output/1062739
• Related Public URLs: http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/