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Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

DiMarino, Christina; Mouawad, Bassem; Johnson, C. Mark; Wang, Meiyu; Tan, Yan-Song; Lu, Guo-Quan; Boroyevich, Dushan; Burgos, Rolando

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module Thumbnail


Authors

Christina DiMarino

Bassem Mouawad

MARK JOHNSON MARK.JOHNSON@NOTTINGHAM.AC.UK
Professor of Advanced Power Conversion

Meiyu Wang

Yan-Song Tan

Guo-Quan Lu

Dushan Boroyevich

Rolando Burgos



Abstract

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limiting the performance of these unique switches. The objective of this article is to push the boundaries of high-density, high-speed, 10-kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference (EMI) issues associated with high-speed, 10-kV devices. The module achieves low and balanced parasitic inductances, resulting in a record switching speed of 250 V/ns with negligible ringing and voltage overshoot. An integrated screen reduces the common-mode (CM) current that is generated by these fast voltage transients by ten times. This screen connection simultaneously increases the partial discharge inception voltage (PDIV) by more than 50%. A compact, medium-voltage termination and system interface design is also proposed in this article. With the integrated jet-impingement cooler, the power module prototype achieves a power density of 4 W/mm3. This article presents the design, prototyping, and testing of this optimized package for 10-kV SiC MOSFETs.

Citation

DiMarino, C., Mouawad, B., Johnson, C. M., Wang, M., Tan, Y., Lu, G., …Burgos, R. (2020). Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 381-394. https://doi.org/10.1109/jestpe.2019.2944138

Journal Article Type Article
Acceptance Date Sep 10, 2019
Online Publication Date Sep 27, 2019
Publication Date 2020-03
Deposit Date May 13, 2020
Publicly Available Date May 13, 2020
Journal IEEE Journal of Emerging and Selected Topics in Power Electronics
Print ISSN 2168-6777
Electronic ISSN 2168-6785
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 8
Issue 1
Pages 381-394
DOI https://doi.org/10.1109/jestpe.2019.2944138
Public URL https://nottingham-repository.worktribe.com/output/3918776
Publisher URL https://ieeexplore.ieee.org/document/8851182
Additional Information © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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