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Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system

Mouawad, Bassem; Skuriat, Robert; Li, Jianfeng; Johnson, C. Mark; DiMarino, Christina

Authors

Bassem Mouawad

Robert Skuriat

Jianfeng Li

C. Mark Johnson

Christina DiMarino



Abstract

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound impacts on the module performance . So, to reap the full benefits of these unique devices an optimized power module package must be developed. This work proposes a wire-bond-less, sandwich structure with embedded decoupling capacitors and stacked ceramic substrates in order to realize a high-density module with low parasitic inductance and low thermal resistance.

Start Date May 13, 2018
Publication Date Jun 25, 2018
Series ISSN 1946-0201
Book Title 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Chapter Number NA
ISBN 9781538629277
APA6 Citation Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)doi:10.1109/ispsd.2018.8393651
DOI https://doi.org/10.1109/ispsd.2018.8393651
Keywords Silicon carbide; Packaging; High voltage; High density; SiC MOSFET; Power module; Direct jet impingement

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