Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system

Mouawad, Bassem; Skuriat, Robert; Li, Jianfeng; Johnson, C. Mark; DiMarino, Christina

Abstract

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound impacts on the module performance . So, to reap the full benefits of these unique devices an optimized power module package must be developed. This work proposes a wire-bond-less, sandwich structure with embedded decoupling capacitors and stacked ceramic substrates in order to realize a high-density module with low parasitic inductance and low thermal resistance.

• Conference Name: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• Start Date: May 13, 2018
• End Date: May 17, 2018
• Acceptance Date: Dec 22, 2017
• Online Publication Date: Jun 25, 2018
• Publication Date: Jun 25, 2018
• Deposit Date: Aug 1, 2018
• Publicly Available Date: Aug 3, 2018
• Series ISSN: 1946-0201
• Book Title: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• Chapter Number: NA
• ISBN: 9781538629277
• DOI: https://doi.org/10.1109/ispsd.2018.8393651
• Keywords: Silicon carbide; Packaging; High voltage; High density; SiC MOSFET; Power module; Direct jet impingement
• Public URL: https://nottingham-repository.worktribe.com/output/894515