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Photoluminescence dynamics in few-layer InSe (2020)
Journal Article
Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., …Schneider, H. (in press). Photoluminescence dynamics in few-layer InSe. Physical Review Materials,

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis... Read More about Photoluminescence dynamics in few-layer InSe.

Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors (2020)
Journal Article
Kovalyuk, Z. D., Kudrynskyi, Z. R., Lv, Q., Yan, F., Mori, N., Zhu, W., …Wang, K. (2020). Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors. Advanced Functional Materials, https://doi.org/10.1002/adfm.201910713

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the fo... Read More about Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors.

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics (2020)
Journal Article
Ubrig, N., Ponomarev, E., Zultak, J., Domaretskiy, D., Zólyomi, V., Terry, D., …Morpurgo, A. F. (2020). Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics. Nature Materials, https://doi.org/10.1038/s41563-019-0601-3

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a s... Read More about Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics.

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3(1), https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors (2019)
Journal Article
Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., …Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154. https://doi.org/10.1021/acsaelm.9b00664

Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wav... Read More about Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors.

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article
Greener, J. D., de Lima Savi, E., Akimov, A. V., Raetz, S., Kudrynskyi, Z., Kovalyuk, Z. D., …Gusev, V. E. (2019). High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics. ACS Nano, 13(10), 11530-11537. https://doi.org/10.1021/acsnano.9b05052

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, doi:10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), doi:10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., …Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), doi:10.1103/PhysRevB.98.075408. ISSN 2469-9950

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure (2018)
Journal Article
Lee, Y., Pisoni, R., Overweg, H., Eich, M., Rickhaus, P., Patane, A., …Ensslin, K. (2018). Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials, 5(3), doi:10.1088/2053-1583/aacb49

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c... Read More about Magnetotransport and lateral confinement in an InSe van der Waals heterostructure.

Improved performance of InSe field-effect transistors by channel encapsulation (2018)
Journal Article
Liang, G., Wang, Y., Han, L., Yang, Z., Xin, Q., Kudrynskyi, Z. R., …Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), doi:10.1088/1361-6641/aab62b

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosp... Read More about Improved performance of InSe field-effect transistors by channel encapsulation.

Gate-defined quantum confinement in InSe-based van der Waals heterostructures (2018)
Journal Article
Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., …Gorbachev, R. (2018). Gate-defined quantum confinement in InSe-based van der Waals heterostructures. Nano Letters, 18(6), 3950–3955. doi:10.1021/acs.nanolett.8b01376

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here w... Read More about Gate-defined quantum confinement in InSe-based van der Waals heterostructures.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3), https://doi.org/10.1088/2053-1583/aac479

We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal (2018)
Journal Article
Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., …Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), doi:10.1002/advs.201800257. ISSN 2198-3844

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These techno... Read More about Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal.

A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal. Physical Review Letters, 119(15), https://doi.org/10.1103/PhysRevLett.119.157701

We report on a “giant” quantum Hall effect plateau in a graphene-based field effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The “giant” quantum Hall effect plateau arises from the close alignment of the condu... Read More about A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal.

Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Smith, E. F., Fay, M. W., Makarovsky, O., Kovalyuk, Z. D., …Patanè, A. (2017). Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 4(2), https://doi.org/10.1088/2053-1583/aa61e0

Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

Highly-mismatched InAs/InSe heterojunction diodes (2016)
Journal Article
Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., …Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), https://doi.org/10.1063/1.4967381

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component... Read More about Highly-mismatched InAs/InSe heterojunction diodes.


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