Shihong Xie
Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures
Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Zakhar R.; Balakrishnan, Nilanthy; Makarovskiy, Oleg; Kovalyuk, Zakhar D.; Castanon, Eli G.; Kolosov, Oleg; Wang, Kaiyou; Patanè, Amalia
Authors
Anubhab Dey
WENJING YAN WENJING.YAN@NOTTINGHAM.AC.UK
Anne Mclaren Research Fellowship
ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows
Nilanthy Balakrishnan
OLEG MAKAROVSKIY Oleg.Makarovsky@nottingham.ac.uk
Associate Professor
Zakhar D. Kovalyuk
Eli G. Castanon
Oleg Kolosov
Kaiyou Wang
Professor AMALIA PATANE AMALIA.PATANE@NOTTINGHAM.AC.UK
Professor of Physics
Abstract
The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.
Journal Article Type | Article |
---|---|
Acceptance Date | Aug 4, 2021 |
Online Publication Date | Aug 20, 2021 |
Publication Date | Oct 1, 2021 |
Deposit Date | Aug 3, 2021 |
Publicly Available Date | Aug 21, 2022 |
Journal | 2D Materials |
Electronic ISSN | 2053-1583 |
Peer Reviewed | Peer Reviewed |
Volume | 8 |
Issue | 4 |
Article Number | 045020 |
DOI | https://doi.org/10.1088/2053-1583/ac1ada |
Keywords | ferroelectrics; semiconductors; two-dimensional materials; electron transport; photoresponse |
Public URL | https://nottingham-repository.worktribe.com/output/5952306 |
Publisher URL | https://iopscience.iop.org/article/10.1088/2053-1583/ac1ada |
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Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures
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Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
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