Skip to main content

Research Repository

Advanced Search

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection

Xie, Shihong; Shiffa, Mustaqeem; Shiffa, Mujahid; Kudrynskyi, Zakhar R; Makarovskiy, Oleg; Kovalyuk, Zakhar D; Zhu, Wenkai; Wang, Kaiyou; Patanè, Amalia

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection Thumbnail


Authors

Shihong Xie

Mustaqeem Shiffa

Mujahid Shiffa

ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows

Zakhar D Kovalyuk

Wenkai Zhu

Kaiyou Wang



Abstract

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) light are still limited by the physical properties of the semiconductors used, such as the small penetration depth of UV light in silicon. Van der Waals (vdW) semiconductors and their pn-junctions can offer an alternative solution due to their optical properties and thin pn-junction region. Here, we report on a multi-layer junction that combines single layer graphene and vdW semiconductors (p-GaSe and n-In2Se3) with strong optical absorption in the UV range. The junctions have broadband spectral response (0.3-1.0 μm) and high photoresponsivity under forward and reverse bias, or without any externally applied voltage. The photoresponse differs from that of a traditional pn-junction diode as it is governed by charge transport across thin layers and light-current conversion at three vdW interfaces (e.g. the graphene/GaSe, GaSe/In2Se3 and In2Se3/graphene interfaces). The type-II band alignment at the GaSe/In2Se3 interface and electric field at the three vdW interfaces are beneficial to suppress carrier recombination for enhanced photoresponsivity (up to ~102 A/W) and detectivity (up to ~1013 Jones), beyond conventional UV-enhanced silicon detection technology.

Citation

Xie, S., Shiffa, M., Shiffa, M., Kudrynskyi, Z. R., Makarovskiy, O., Kovalyuk, Z. D., …Patanè, A. (2022). Van der Waals interfaces in multilayer junctions for ultraviolet photodetection. npj 2D Materials and Applications, 6(1), Article 61. https://doi.org/10.1038/s41699-022-00338-0

Journal Article Type Article
Acceptance Date Aug 24, 2022
Online Publication Date Sep 8, 2022
Publication Date Dec 1, 2022
Deposit Date Aug 25, 2022
Publicly Available Date Sep 8, 2022
Journal npj 2D Materials and Applications
Electronic ISSN 2397-7132
Publisher Springer Science and Business Media LLC
Peer Reviewed Peer Reviewed
Volume 6
Issue 1
Article Number 61
DOI https://doi.org/10.1038/s41699-022-00338-0
Keywords Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science; General Chemistry
Public URL https://nottingham-repository.worktribe.com/output/10364732
Publisher URL https://www.nature.com/articles/s41699-022-00338-0

Files




You might also like



Downloadable Citations