Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6

Dey, Anubhab; Yan, Wenjing; Balakrishnan, Nilanthy; Xie, Shihong; Kudrynskyi, Zakhar R.; Makarovskiy, Oleg; Yan, Faguang; Wang, Kaiyou; Patanè, Amalia

Abstract

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much attention due to its robust ferroelectricity found in thin layers at room temperature. Also, unlike many 2D ferroelectrics, CIPS is a wide band gap semiconductor, well suited for use as a gate in field-effect transistors (FETs). Here, we report on a hybrid FET in which the graphene conducting channel is gated through a CIPS layer. We reveal hysteresis effects in the transfer characteristics of the FET, which are sensitive to the gate voltage, temperature and light illumination. We demonstrate charge transfer at the CIPS/graphene interface in the dark and under light illumination. In particular, light induces a photodoping effect in graphene that varies from n- to p-type with increasing temperature. These hybrid FETs open up opportunities for electrically and optically controlled memristive devices.

• Journal Article Type: Article
• Acceptance Date: Mar 28, 2022
• Online Publication Date: Apr 12, 2022
• Publication Date: Apr 12, 2022
• Deposit Date: Mar 30, 2022
• Publicly Available Date: Apr 13, 2023
• Journal: 2D Materials
• Electronic ISSN: 2053-1583
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 9
• Issue: 3
• Article Number: 035003
• DOI: https://doi.org/10.1088/2053-1583/ac6191
• Keywords: Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science; General Chemistry
• Public URL: https://nottingham-repository.worktribe.com/output/7678800
• Publisher URL: https://iopscience.iop.org/article/10.1088/2053-1583/ac6191/meta