Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs

Romano, Gianpaolo; Riccio, Michele; Maresca, Luca; Fayyaz, Asad; Castellazzi, Alberto

Abstract

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence

Citation

Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

• Conference Name: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• End Date: Jun 16, 2016
• Acceptance Date: Dec 14, 2015
• Online Publication Date: Jul 28, 2016
• Deposit Date: Sep 8, 2016
• Publicly Available Date: Sep 8, 2016
• Peer Reviewed: Peer Reviewed
• Keywords: Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation
• Public URL: https://nottingham-repository.worktribe.com/output/799087
• Publisher URL: http://ieeexplore.ieee.org/document/7520774/?arnumber=7520774
• Related Public URLs: http://www.ispsd2016.com/
• Additional Information: Published in: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). ISBN: 978-1-4673-8770-5. pp. 47-50, doi:10.1109/ISPSD.2016.7520774 ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.