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Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs

Romano, Gianpaolo; Riccio, Michele; Maresca, Luca; Fayyaz, Asad; Castellazzi, Alberto

Authors

Gianpaolo Romano

Michele Riccio

Luca Maresca

Asad Fayyaz eexaf12@exmail.nottingham.ac.uk

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence

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APA6 Citation Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
Keywords Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation
Publisher URL http://ieeexplore.ieee.org/document/7520774/?arnumber=7520774
Related Public URLs http://www.ispsd2016.com/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information Published in: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). ISBN: 978-1-4673-8770-5. pp. 47-50, doi:10.1109/ISPSD.2016.7520774 ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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