Avalanche ruggedness of parallel SiC power MOSFETs

Fayyaz, A.; Asllani, B.; Castellazzi, A.; Riccio, M.; Irace, A.

Abstract

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated power module. The tests were conducted on second generation 1200 V, 36 A–80 mΩ rated devices. Different temperature-dependent electrical parameters were identified and measured for a number of devices. The influence of spread in measured parameters was investigated experimentally during avalanche breakdown transient switching events and important findings have been highlighted.

Citation

Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

• Journal Article Type: Article
• Acceptance Date: Jun 25, 2018
• Online Publication Date: Sep 30, 2018
• Publication Date: Sep 30, 2018
• Deposit Date: Jan 9, 2019
• Publicly Available Date: Oct 1, 2019
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 88-90
• Pages: 666-670
• DOI: https://doi.org/10.1016/j.microrel.2018.06.038
• Keywords: Avalanche ruggedness; SiC; Power MOSFETs; UIS; Parallel operation; Robustness
• Public URL: https://nottingham-repository.worktribe.com/output/1317528
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0026271418304542?via%3Dihub
• Additional Information: This article is maintained by: Elsevier; Article Title: Avalanche ruggedness of parallel SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2018.06.038; Content Type: article; Copyright: © 2018 Elsevier Ltd. All rights reserved.