Professor Peter Beton's Outputs (60)

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy (2024)
Journal Article
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5(1), Article 189. https://doi.org/10.1038/s43246-024-00633-x

Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN offers an... Read More about High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride (2024)
Journal Article
Shima, K., Cheng, T. S., Mellor, C. J., Beton, P. H., Elias, C., Valvin, P., Gil, B., Cassabois, G., Novikov, S. V., & Chichibu, S. F. (2024). Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports, 14(1), Article 169. https://doi.org/10.1038/s41598-023-50502-9

Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple light scatte... Read More about Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., Makarovskiy, O., Rahman, K., O'Shea, J. N., Beton, P. H., Novikov, S. V., Ben, T., Gonzalez, D., Xie, J., Zhang, L., & Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article
Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., Taniguchi, T., Novikov, S. V., & Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode (2023)
Journal Article
James, T., Bradford, J., Kerfoot, J., Korolkov, V. V., Alkhamisi, M., Taniguchi, T., Watanabe, K., Nizovtsev, A. S., Antolín, E., Besley, E., Svatek, S. A., & Beton, P. H. (2023). Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode. Molecular Physics, 121(7-8), Article e2197081. https://doi.org/10.1080/00268976.2023.2197081

Monolayers of free base phthalocyanine (H2Pc) are grown on monolayer and few-layer exfoliated flakes of hexagonal boron nitride (hBN) which are subsequently integrated into a van der Waals tunnel diode. This heterostructure consists of two thin hBN f... Read More about Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode.

Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals (2022)
Journal Article
Austin, J. S., Cottam, N. D., Zhang, C., Wang, F., Gosling, J. H., Nelson-Dummet, O., James, T. S., Beton, P. H., Trindade, G. F., Zhou, Y., Tuck, C. J., Hague, R., Makarovsky, O., & Turyanska, L. (2023). Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals. Nanoscale, 15(5), 2134–2142. https://doi.org/10.1039/D2NR06429D

All-inorganic perovskite nanocrystals (NCs) with enhanced environmental stability are of particular interest for optoelectronic applications. Here we report on the formulation of CsPbX3 (X is Br or I) inks for inkjet deposition and utilise these NCs... Read More about Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., Pettinari, G., Cooper, T., Wadge, M., Kovalyuk, Z., Polimeni, A., Beton, P., Grant, D., Walker, G., & Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Submolecular Resolution Imaging of P3HT:PCBM Nanostructured Films by Atomic Force Microscopy: Implications for Organic Solar Cells (2022)
Journal Article
Liirò-Peluso, L., Wrigley, J., Amabilino, D. B., & Beton, P. H. (2022). Submolecular Resolution Imaging of P3HT:PCBM Nanostructured Films by Atomic Force Microscopy: Implications for Organic Solar Cells. ACS Applied Nano Materials, 5(10), 13794-13804. https://doi.org/10.1021/acsanm.2c01399

The efficiency of organic bulk-heterojunction (BHJ) solar cells depends greatly on both the bulk and surface structure of the nanostructured bicontinuous interpenetrating network of materials, known as the active layer. The morphology of the top laye... Read More about Submolecular Resolution Imaging of P3HT:PCBM Nanostructured Films by Atomic Force Microscopy: Implications for Organic Solar Cells.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., Summerfield, A., Mellor, C. J., Cheng, T. S., Eaves, L., Foxon, C., Beton, P., Lazzeri, M., Segura, A., & Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/physrevx.12.011057

The light-matter interaction in bulk semiconductors is in the strong coupling regime with hybrid eigenstates, the so-called exciton-polaritons and phonon-polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., Summerfield, A., Mellor, C., Cheng, T., Eaves, L., Foxon, C., Beton, P., Lazzeri, M., Segura, A., & Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/PhysRevX.12.011057

The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Journal Article
Román, R. J. P., Costa, F. J. R., Zobelli, A., Elias, C., Valvin, P., Cassabois, G., GIL, B., Summerfield, A., Cheng, T. S., Mellor, C. J., Beton, P. H., Novikov, S. V., & Zagonel, L. F. (2021). Band gap measurements of monolayer h-BN and insights into carbon-related point defects. 2D Materials, 8(4), Article 044001. https://doi.org/10.1088/2053-1583/ac0d9c

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature si... Read More about Band gap measurements of monolayer h-BN and insights into carbon-related point defects.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., Novikov, S. V., & Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.

Natural optical activity as the origin of the large chiroptical properties in π-conjugated polymer thin films (2020)
Journal Article
Wade, J., Hilfiker, J. N., Brandt, J. R., Liirò-Peluso, L., Wan, L., Shi, X., Salerno, F., Ryan, S. T. J., Schöche, S., Arteaga, O., Jávorfi, T., Siligardi, G., Wang, C., Amabilino, D. B., Beton, P. H., Campbell, A. J., & Fuchter, M. J. (2020). Natural optical activity as the origin of the large chiroptical properties in π-conjugated polymer thin films. Nature Communications, 11(1), Article 6137. https://doi.org/10.1038/s41467-020-19951-y

Polymer thin films that emit and absorb circularly polarised light have been demonstrated with the promise of achieving important technological advances; from efficient, high-performance displays, to 3D imaging and all-organic spintronic devices. How... Read More about Natural optical activity as the origin of the large chiroptical properties in π-conjugated polymer thin films.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride (2020)
Journal Article
Mendelson, N., Chugh, D., Reimers, J. R., Cheng, T. S., Gottscholl, A., Long, H., Mellor, C. J., Zettl, A., Dyakonov, V., Beton, P. H., Novikov, S. V., Jagadish, C., Tan, H. H., Ford, M. J., Toth, M., Bradac, C., & Aharonovich, I. (2021). Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride. Nature Materials, 20(3), 321-328. https://doi.org/10.1038/s41563-020-00850-y

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations,... Read More about Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride.

High open-circuit voltage in transition metal dichalcogenide solar cells (2020)
Journal Article
Svatek, S. A., Bueno-Blanco, C., Lin, D.-Y., Kerfoot, J., Macías, C., Zehender, M. H., Tobías, I., García-Linares, P., Taniguchi, T., Watanabe, K., Beton, P., & Antolín, E. (2021). High open-circuit voltage in transition metal dichalcogenide solar cells. Nano Energy, 79, Article 105427. https://doi.org/10.1016/j.nanoen.2020.105427

The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertic... Read More about High open-circuit voltage in transition metal dichalcogenide solar cells.

Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride (2020)
Journal Article
Kerfoot, J., Svatek, S. A., Korolkov, V. V., Taniguchi, T., Watanabe, K., Antolin, E., & Beton, P. H. (2020). Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride. ACS Nano, 14(10), 13886–13893. https://doi.org/10.1021/acsnano.0c06280

The photophysics of a semiconducting polymer is manipulated through molecular self-assembly on an insulating surface. Adsorption of polythiophene (PT) monolayers on hexagonal boron nitride (hBN) leads to a structurally induced planarization and a reb... Read More about Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride.

Production and processing of graphene and related materials (2020)
Journal Article
Backes, C., Abdelkader, A. M., Alonso, C., Andrieux-Ledier, A., Arenal, R., Azpeitia, J., Balakrishnan, N., Banszerus, L., Barjon, J., Bartali, R., Bellani, S., Berger, C., Berger, R., Ortega, M. M. B., Bernard, C., Beton, P. H., Beyer, A., Bianco, A., Bøggild, P., Bonaccorso, F., …Garcia-Hernandez, M. (2020). Production and processing of graphene and related materials. 2D Materials, 7(2), Article 022001. https://doi.org/10.1088/2053-1583/ab1e0a

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., Kovalyuk, Z. D., Eaves, L., Beton, P. H., & Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3, Article 16. https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Triplet Excitation and Electroluminescence from a Supramolecular Monolayer Embedded in a Boron Nitride Tunnel Barrier (2019)
Journal Article
Svatek, S. A., Kerfoot, J., Summerfield, A., Nizovtsev, A. S., Korolkov, V. V., Taniguchi, T., Watanabe, K., Antolín, E., Besley, E., & Beton, P. H. (2020). Triplet Excitation and Electroluminescence from a Supramolecular Monolayer Embedded in a Boron Nitride Tunnel Barrier. Nano Letters, 20(1), 278-283. https://doi.org/10.1021/acs.nanolett.9b03787

© 2019 American Chemical Society. We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated into van der Waals heterostructures... Read More about Triplet Excitation and Electroluminescence from a Supramolecular Monolayer Embedded in a Boron Nitride Tunnel Barrier.