Dr OLEG MAKAROVSKIY Oleg.Makarovsky@nottingham.ac.uk
ASSOCIATE PROFESSOR
High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy
Makarovsky, Oleg; Hill, Richard J. A.; Cheng, Tin S.; Summerfield, Alex; Taniguchi, Takeshi; Watanabe, Kenji; Mellor, Christopher J.; Patanè, Amalia; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.
Authors
Dr RICHARD HILL RICHARD.HILL@NOTTINGHAM.AC.UK
ASSOCIATE PROFESSOR
Dr TIN CHENG Tin.Cheng@nottingham.ac.uk
RESEARCH FELLOW
Alex Summerfield
Takeshi Taniguchi
Kenji Watanabe
Dr CHRISTOPHER MELLOR chris.mellor@nottingham.ac.uk
ASSOCIATE PROFESSOR AND READER IN PHYSICS
Professor Amalia Patane AMALIA.PATANE@NOTTINGHAM.AC.UK
PROFESSOR OF PHYSICS
Laurence Eaves
Professor SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
PROFESSOR OF PHYSICS
Professor Peter Beton peter.beton@nottingham.ac.uk
PROFESSOR OF PHYSICS
Abstract
Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN offers an alternative fabrication route for hBN/graphene devices. Here, we investigate the electronic transport of moiré field effect transistors (FETs) in which the conducting channel is monolayer graphene grown on hexagonal boron nitride by high temperature molecular beam epitaxy (HT-MBE). Alignment between hBN and HT-MBE graphene crystal lattices gives rise to a moiré-fringed hexagonal superlattice pattern. Its electronic band structure takes the form of a “Hofstadter butterfly”. When a strong magnetic field B is applied perpendicular to the graphene layer, the electrical conductance displays magneto-oscillations, periodic in B−1, over a wide range of gate voltages and temperatures up to 350 K. We attribute this behaviour to the quantisation of electronic charge and magnetic flux within each unit cell of the superlattice, which gives rise to so-called Brown-Zak oscillations, previously reported only in high-mobility exfoliated graphene. Thus, this HT-MBE graphene/hBN heterostructure provides a platform for observation of room temperature quantum effects and device applications.
Citation
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5(1), Article 189. https://doi.org/10.1038/s43246-024-00633-x
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 5, 2024 |
Online Publication Date | Sep 14, 2024 |
Publication Date | Sep 14, 2024 |
Deposit Date | Sep 12, 2024 |
Publicly Available Date | Jan 17, 2025 |
Journal | Communications Materials |
Electronic ISSN | 2662-4443 |
Publisher | Springer Nature |
Peer Reviewed | Peer Reviewed |
Volume | 5 |
Issue | 1 |
Article Number | 189 |
DOI | https://doi.org/10.1038/s43246-024-00633-x |
Public URL | https://nottingham-repository.worktribe.com/output/39460081 |
Publisher URL | https://www.nature.com/articles/s43246-024-00633-x |
Additional Information | Received: 7 May 2024; Accepted: 5 September 2024; First Online: 14 September 2024; : The authors declare no competing interests. |
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s43246-024-00633-x
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Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
Copyright Statement
© The Author(s) 2024
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