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High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

Makarovsky, Oleg; Hill, Richard J. A.; Cheng, Tin S.; Summerfield, Alex; Taniguchi, Takeshi; Watanabe, Kenji; Mellor, Christopher J.; Patanè, Amalia; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy Thumbnail


Authors

Alex Summerfield

Takeshi Taniguchi

Kenji Watanabe

Laurence Eaves



Abstract

Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN offers an alternative fabrication route for hBN/graphene devices. Here, we investigate the electronic transport of moiré field effect transistors (FETs) in which the conducting channel is monolayer graphene grown on hexagonal boron nitride by high temperature molecular beam epitaxy (HT-MBE). Alignment between hBN and HT-MBE graphene crystal lattices gives rise to a moiré-fringed hexagonal superlattice pattern. Its electronic band structure takes the form of a “Hofstadter butterfly”. When a strong magnetic field B is applied perpendicular to the graphene layer, the electrical conductance displays magneto-oscillations, periodic in B−1, over a wide range of gate voltages and temperatures up to 350 K. We attribute this behaviour to the quantisation of electronic charge and magnetic flux within each unit cell of the superlattice, which gives rise to so-called Brown-Zak oscillations, previously reported only in high-mobility exfoliated graphene. Thus, this HT-MBE graphene/hBN heterostructure provides a platform for observation of room temperature quantum effects and device applications.

Citation

Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5(1), Article 189. https://doi.org/10.1038/s43246-024-00633-x

Journal Article Type Article
Acceptance Date Sep 5, 2024
Online Publication Date Sep 14, 2024
Publication Date Sep 14, 2024
Deposit Date Sep 12, 2024
Publicly Available Date Jan 17, 2025
Journal Communications Materials
Electronic ISSN 2662-4443
Publisher Springer Nature
Peer Reviewed Peer Reviewed
Volume 5
Issue 1
Article Number 189
DOI https://doi.org/10.1038/s43246-024-00633-x
Public URL https://nottingham-repository.worktribe.com/output/39460081
Publisher URL https://www.nature.com/articles/s43246-024-00633-x
Additional Information Received: 7 May 2024; Accepted: 5 September 2024; First Online: 14 September 2024; : The authors declare no competing interests.

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