Resonant tunnelling into the two-dimensional subbands of InSe layers

Abstract

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities. Here we realize a resonant tunnelling transistor (RTT) based on a 2D InSe layer sandwiched between two multi-layered graphene (MLG) electrodes. In the RTT the energy of the quantum-confined 2D subbands of InSe can be tuned by the thickness of the InSe layer. By applying a voltage across the two MLG electrodes, which serve as the source and drain electrodes to the InSe, the chemical potential in the source can be tuned in and out of resonance with a given 2D subband, leading to multiple regions of negative differential conductance that can be additionally tuned by electrostatic gating. This work demonstrates the potential of InSe and InSe-based RTTs for applications in quantum electronics. 2

Citation

Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3(1), Article 16. https://doi.org/10.1038/s42005-020-0290-x

• Journal Article Type: Article
• Acceptance Date: Jan 7, 2020
• Online Publication Date: Jan 21, 2020
• Publication Date: Jan 21, 2020
• Deposit Date: Jan 9, 2020
• Journal: Communications Physics
• Electronic ISSN: 2399-3650
• Publisher: Nature Publishing Group
• Peer Reviewed: Peer Reviewed
• Volume: 3
• Issue: 1
• Article Number: 16
• DOI: https://doi.org/10.1038/s42005-020-0290-x
• Public URL: https://nottingham-repository.worktribe.com/output/3694335
• Publisher URL: https://www.nature.com/articles/s42005-020-0290-x
• Additional Information: Received: 10 September 2019; Accepted: 7 January 2020; First Online: 21 January 2020; : The authors declare no competing interests.