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Resonant tunnelling into the two-dimensional subbands of InSe layers


James Kerfoot

Debarati Mazumder

Mark T. Greenaway

Evgeni E. Vdovin

Zakhar D. Kovalyuk


Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities. Here we realize a resonant tunnelling transistor (RTT) based on a 2D InSe layer sandwiched between two multi-layered graphene (MLG) electrodes. In the RTT the energy of the quantum-confined 2D subbands of InSe can be tuned by the thickness of the InSe layer. By applying a voltage across the two MLG electrodes, which serve as the source and drain electrodes to the InSe, the chemical potential in the source can be tuned in and out of resonance with a given 2D subband, leading to multiple regions of negative differential conductance that can be additionally tuned by electrostatic gating. This work demonstrates the potential of InSe and InSe-based RTTs for applications in quantum electronics. 2


Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3(1), Article 16.

Journal Article Type Article
Acceptance Date Jan 7, 2020
Online Publication Date Jan 21, 2020
Publication Date Jan 21, 2020
Deposit Date Jan 9, 2020
Journal Communications Physics
Electronic ISSN 2399-3650
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 3
Issue 1
Article Number 16
Public URL
Publisher URL
Additional Information Received: 10 September 2019; Accepted: 7 January 2020; First Online: 21 January 2020; : The authors declare no competing interests.


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