Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction
(2023)
Journal Article
A NiO/β-Ga2O3 heterojunction was fabricated by sputtering a highly p-doped NiO layer onto β-Ga2O3. This heterojunction showed a low leakage current and a high turn-on voltage (Von) compared to a Ni/β-Ga2O3 Schottky barrier diode. The extracted Von fr... Read More about Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction.