Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module
(2018)
Conference Proceeding
In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.