Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs
(2022)
Conference Proceeding
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., …Lophitis, N. (2022). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. In 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ecce50734.2022.9947492
Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.