Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
(2024)
Journal Article
Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage ( Vth ) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.