Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Van Do, Thang; Trovao, Joao Pedro F.; Li, Ke; Boulon, Loic

Abstract

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semiconductors are lower power losses, higher switching frequencies, and higher junction temperatures. Thus, using WBG power semiconductor devices for EV power electronic systems improves EV efficiency, reliability, and mileage; however, these adoptions are still under challenges in terms of packaging and power converters design. In this article, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, the recent progress of different commercial WBG power semiconductor devices is reviewed and different solutions are reported to overcome R&D obstacles.

Citation

Van Do, T., Trovao, J. P. F., Li, K., & Boulon, L. (2021). Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends. IEEE Vehicular Technology Magazine, 16(4), 89-98. https://doi.org/10.1109/MVT.2021.3112943

• Journal Article Type: Article
• Acceptance Date: Nov 1, 2021
• Online Publication Date: Oct 15, 2021
• Publication Date: Oct 15, 2021
• Deposit Date: Nov 1, 2023
• Journal: IEEE Vehicular Technology Magazine
• Print ISSN: 1556-6072
• Electronic ISSN: 1556-6080
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 16
• Issue: 4
• Pages: 89-98
• DOI: https://doi.org/10.1109/MVT.2021.3112943
• Keywords: Automotive Engineering
• Public URL: https://nottingham-repository.worktribe.com/output/26803208
• Publisher URL: https://ieeexplore.ieee.org/document/9576656