All Outputs (75)

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions (2023)
Journal Article

Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity... Read More about A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Subnanometer-Wide Indium Selenide Nanoribbons (2023)
Journal Article

Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In th... Read More about Subnanometer-Wide Indium Selenide Nanoribbons.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors (2022)
Journal Article

Stable all-inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS-UV range. The performance of these perovskite/graphene f... Read More about Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions (2022)
Journal Article

A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructur... Read More about Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions.

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection (2022)
Journal Article

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) li... Read More about Van der Waals interfaces in multilayer junctions for ultraviolet photodetection.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3 (2021)
Journal Article

The interplay between the strong intralayer covalent-ionic bonds and the weak interlayer van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to unique physical and chemical properties. Here, the intralayer and interla... Read More about Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

CsPb(Br/I)3Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes (2021)
Journal Article

The modulation bandwidth of white light emitting diodes (LEDs) is an important factor in visible light communication (VLC) system, which is mainly limited by the down-conversion materials. The broad spectrum and long lifetime of conventional light co... Read More about CsPb(Br/I)3Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes.

Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals (2021)
Journal Article

Inorganic perovskite nanocrystals (NCs) have demonstrated a number of unique optical and electronic properties for optoelectronic applications. However, the physical properties of these nanostructures, such as the dynamics of charge carriers on diffe... Read More about Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals.