Outputs (41)

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z. R., Balakrishnan, N., Makarovskiy, O., …Patanè, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), Article 045020. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals (2021)
Journal Article
Cottam, N. D., Zhang, C., Wildman, J. L., Patanè, A., Turyanska, L., & Makarovsky, O. (2021). Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals. Advanced Optical Materials, 9(13), https://doi.org/10.1002/adom.202100104

Inorganic perovskite nanocrystals (NCs) have demonstrated a number of unique optical and electronic properties for optoelectronic applications. However, the physical properties of these nanostructures, such as the dynamics of charge carriers on diffe... Read More about Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals.

Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices (2020)
Journal Article
Wang, F., Gosling, J. H., Rance, G. A., Trindade, G. F., Makarovsky, O., Cottam, N. D., …Turyanska, L. (2021). Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices. Advanced Functional Materials, 31(5), Article 2007478. https://doi.org/10.1002/adfm.202007478

© 2020 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH 2D materials have unique structural and electronic properties with potential for transformative device applications. However, such devices are usually bespoke structures ma... Read More about Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices.

Enhanced Optical Emission from 2D InSe Bent onto Si?Pillars (2020)
Journal Article
Mazumder, D., Xie, J., Kudrynskyi, Z. R., Wang, X., Makarovsky, O., Bhuiyan, M. A., …Patanè, A. (2020). Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars. Advanced Optical Materials, 8(18), Article 2000828. https://doi.org/10.1002/adom.202000828

Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical pr... Read More about Enhanced Optical Emission from 2D InSe Bent onto Si?Pillars.

The Interaction of Hydrogen with the van der Waals Crystal ?-InSe (2020)
Journal Article
Felton, J., Blundo, E., Ling, S., Glover, J., Kudrynskyi, Z. R., Makarovsky, O., …Patané, A. (2020). The Interaction of Hydrogen with the van der Waals Crystal γ-InSe. Molecules, 25(11), Article 2526. https://doi.org/10.3390/molecules25112526

The emergence of the hydrogen economy requires development in the storage, generation and sensing of hydrogen. The indium selenide (?-InSe) van der Waals (vdW) crystal shows promise for technologies in all three of these areas. For these applications... Read More about The Interaction of Hydrogen with the van der Waals Crystal ?-InSe.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters, 116(14), Article 142108. https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths ? > 2??m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode. Applied Physics Letters, 116(14), Article 142108. https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths ? > 2??m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode.

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3, Article 16. https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), Article 1908092. https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Patanè, A., Mishchenko, A., Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1(1), Article 94. https://doi.org/10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.