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Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode


D. M. Di Paola

Q. Lu

E. Repiso

M. Kesaria

A. Krier


Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths ? > 2??m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (????3??m), extending the output of the diode to ????5??m. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain ?E?>?0.2?eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.
The data on which this manuscript is based are available as an online resource with digital object identifier (DOI) 10.17639/nott.7041.


Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode. Applied Physics Letters, 116(14), Article 142108.

Journal Article Type Article
Acceptance Date Mar 24, 2020
Online Publication Date Apr 9, 2020
Publication Date Apr 6, 2020
Deposit Date Mar 26, 2020
Publicly Available Date Apr 6, 2020
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 116
Issue 14
Article Number 142108
Public URL
Publisher URL


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