Outputs (56)

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module (2019)
Journal Article
DiMarino, C., Mouawad, B., Johnson, C. M., Wang, M., Tan, Y.-S., Lu, G.-Q., Boroyevich, D., & Burgos, R. (2020). Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 381-394. https://doi.org/10.1109/jestpe.2019.2944138

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limi... Read More about Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module.

Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules (2019)
Journal Article
Agyakwa, P., Dai, J., Li, J., Mouawad, B., Yang, L., Corfield, M., & Johnson, C. (2019). Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules. Journal of Microscopy, 277(3), 140-153. https://doi.org/10.1111/jmi.12803

© 2019 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society. A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morp... Read More about Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules.

Packaging technology for a highly integrated 10kV SiC MOSFET module (2018)
Presentation / Conference Contribution
Mouawad, B., Di Marino, C., Li, J., Skuriat, R., & Johnson, M. (2018, August). Packaging technology for a highly integrated 10kV SiC MOSFET module. Paper presented at 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However,... Read More about Packaging technology for a highly integrated 10kV SiC MOSFET module.

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system (2018)
Presentation / Conference Contribution
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018, May). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. Presented at 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Presentation / Conference Contribution
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., Boroyevich, D., & Burgos, R. (2018, June). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. Presented at PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Cost effective direct-substrate jet impingement cooling concept for power application (2018)
Presentation / Conference Contribution
Mouawad, B., Abebe, R., Skuriat, R., Li, J., De Lillo, L., Empringham, L., Johnson, C. M., Roberts, A., Clarke, R., & Haynes, G. (2018, June). Cost effective direct-substrate jet impingement cooling concept for power application. Presented at PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Direct substrate jet impingement cooling can eliminate the use of the baseplate and significantly reduce the weight and volume of conventional thermal management solutions. This work demonstrates a cost-effective manufacturing approach based on print... Read More about Cost effective direct-substrate jet impingement cooling concept for power application.

Novel silicon carbide integrated power module for EV application (2018)
Presentation / Conference Contribution
Mouawad, B., Espina, J., Li, J., Empringham, L., & Johnson, C. M. (2018, May). Novel silicon carbide integrated power module for EV application. Presented at WiPDA 2018 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high integration power electronic systems. The present work is concerned with the structural in... Read More about Novel silicon carbide integrated power module for EV application.

Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems (2018)
Presentation / Conference Contribution
Ahmadi, B., Espina, J., De Lillo, L., Abebe, R., Empringham, L., & Johnson, C. M. Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems. Presented at 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018)

In this paper, an innovative method of electro-thermal integration of a drive system is presented. Important challenges of this integration consist of, firstly coupled thermal design of switching power modules and PM electric motor and secondly integ... Read More about Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems.

Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling (2018)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2018). Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling. IEEE Transactions on Device and Materials Reliability, 18(2), 256-265. https://doi.org/10.1109/TDMR.2018.2825386

13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 ºC and a pressure of 10MPa for 5 minutes and compared with Pb5Sn solder joint die attachments under constant current power cycling with an i... Read More about Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling.

Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules (2018)
Presentation / Conference Contribution
Yang, L., Agyakwa, P., Corfield, M., Johnson, M., Harris, A., Packwood, M., & Paciura, K. Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules. Presented at 10th International Conference on Integrated Power Electronics (CIPS 2018)

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance character... Read More about Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.