Outputs (2)

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area (2020)
Conference Proceeding
Antoniou, M., Lophitis, N., Udrea, F., Corvasce, C., & De-Michielis, L. (2020). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (134-137). https://doi.org/10.1109/ISPSD46842.2020.9170084

© 2020 IEEE. A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of h... Read More about The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area.

Integrated Gate Commutated Thyristor: From Trench to Planar (2020)
Conference Proceeding
Vemulapati, U., Stiasny, T., Wikström, T., Lophitis, N., & Udrea, F. (2020). Integrated Gate Commutated Thyristor: From Trench to Planar. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (490-493). https://doi.org/10.1109/ISPSD46842.2020.9170102

© 2020 IEEE. The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been... Read More about Integrated Gate Commutated Thyristor: From Trench to Planar.