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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures (2018)
Journal Article
Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated comme... Read More about SiC MOSFET device parameter spread and ruggedness of parallel multichip structures.