All Outputs (4)

Packaging for fast switching power electronics (2023)
Conference Proceeding
Marchant, S., Dai, J., Mouawad, B., Empringham, L., & Clare, J. (2023). Packaging for fast switching power electronics. In 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP). https://doi.org/10.1109/SPEC56436.2023.10408379

This work investigates printed circuit board embedding of the power devices in order to support low inductance, fast switching package designs. The embedding process is discussed and a half bridge package is designed around a 500V supply voltage and... Read More about Packaging for fast switching power electronics.

A Topology-Morphing Series Resonant Converter for Photovoltaic Module Applications (2022)
Conference Proceeding
Sergentanis, G., De Lillo, L., Empringham, L., & Johnson, C. M. (2022). A Topology-Morphing Series Resonant Converter for Photovoltaic Module Applications. In 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Residential solar photovoltaic (PV) installations frequently use power optimizers to increase their energy production. In this application, the ability to regulate a wide range of voltage with high efficiency is highly desirable. Thus, this paper pro... Read More about A Topology-Morphing Series Resonant Converter for Photovoltaic Module Applications.

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., …Lophitis, N. (2022). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. In 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ecce50734.2022.9947492

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding
Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.