Strain-restricted transfer of ferromagnetic electrodes for constructing reproducibly superior-quality spintronic devices

Guo, Lidan; Gu, Xianrong; Hu, Shunhua; Sun, Wenchao; Zhang, Rui; Qin, Yang; Meng, Ke; Lu, Xiangqian; Liu, Yayun; Wang, Jiaxing; Ma, Peijie; Zhang, Cheng; Guo, Ankang; Yang, Tingting; Yang, Xueli; Wang, Guorui; Liu, Yaling; Wang, Kai; Mi, Wenbo; Zhang, Chuang; Jiang, Lang; Liu, Luqi; Zheng, Kun; Qin, Wei; Yan, Wenjing; Sun, Xiangnan

doi:10.1038/s41467-024-45200-7

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
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The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

Emerging Spintronic Materials and Functionalities (2023)
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The explosive growth of the information era has put forward urgent requirements for ultra-high-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data... Read More about Emerging Spintronic Materials and Functionalities.

Temperature-Dependent Mechanism of Magnetization Reversal in the Spintronic Electrode Material La0.67Sr0.33Mn O3 (2022)
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We investigate magnetization-reversal processes in half-metallic epitaxial films of La0.67Sr0.33MnO3 on SrTiO3 (110) substrates. At 150 K, major-loop magnetization reversal (MLMR) occurs beyond minor-loop switching fields, implying that MLMR is limit... Read More about Temperature-Dependent Mechanism of Magnetization Reversal in the Spintronic Electrode Material La0.67Sr0.33Mn O3.

Coherent Phononics of van der Waals Layers on Nanogratings (2022)
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Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain engineering to control classical and quantum phenomena in the unex... Read More about Coherent Phononics of van der Waals Layers on Nanogratings.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
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Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3 (2021)
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The interplay between the strong intralayer covalent-ionic bonds and the weak interlayer van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to unique physical and chemical properties. Here, the intralayer and interla... Read More about Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
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The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Shear-strain-mediated magnetoelectric effects revealed by imaging (2019)
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Large changes in the magnetization of ferromagnetic films can be electrically driven by non-180° ferroelectric domain switching in underlying substrates, but the shear components of the strains that mediate these magnetoelectric effects have not been... Read More about Shear-strain-mediated magnetoelectric effects revealed by imaging.

Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure (2017)
Journal Article

© 2017 The Author(s). Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-... Read More about Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure.

Competing effects at Pt/YIG interfaces: Spin Hall magnetoresistance, magnon excitations, and magnetic frustration (2016)
Journal Article

©2016 American Physical Society. We study spin Hall magnetoresistance (SMR) and magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film res... Read More about Competing effects at Pt/YIG interfaces: Spin Hall magnetoresistance, magnon excitations, and magnetic frustration.

Strain-restricted transfer of ferromagnetic electrodes for constructing reproducibly superior-quality spintronic devices (2014)
Journal Article

Spintronic device is the fundamental platform for spin-related academic and practical studies. However, conventional techniques with energetic deposition or boorish transfer of ferromagnetic metal inevitably introduce uncontrollable damage and undesi... Read More about Strain-restricted transfer of ferromagnetic electrodes for constructing reproducibly superior-quality spintronic devices.

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