All Outputs (31)

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Presentation / Conference Contribution
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., Kaushik, A., Lien, Y.-H., Niggebaum, A., Perea-Ortiz, M., Petrov, P., Plant, S., Singh, Y., Stabrawa, A., Paul, D., Sorel, M., Cumming, D., Marsh, J., Bowtell, R. W., Bason, M., …John, P. (2016, April). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Presented at SPIE Photonics Europe, 2016, Brussels, Belgium

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes (2016)
Journal Article
Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zhang, S., Zaidi, Z., Jiang, S., Wallis, D., Foxon, C., Humphreys, C., & Houston, P. (2016). Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31(6), https://doi.org/10.1088/0268-1242/31/6/065020

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×... Read More about Characterization of p-GaN1−xAsx/n-GaN PN junction diodes.

Surface acoustic wave velocity and elastic constants of cubic GaN (2016)
Journal Article
Riobóo, R. J. J., Cuscó, R., Prieto, C., Kopittke, C., Novikov, S. V., & Artús, L. (2016). Surface acoustic wave velocity and elastic constants of cubic GaN. Applied Physics Express, 9(6), Article 061001. https://doi.org/10.7567/APEX.9.061001

We present high-resolution surface Brillouin scattering measurements on cubic GaN layers grown on GaAs substrate. By using a suitable scattering geometry, scattering by surface acoustic waves is recorded for different azimuthal angles, and the surfac... Read More about Surface acoustic wave velocity and elastic constants of cubic GaN.

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C., Sahonta, S.-L., Oliver, R., Humphreys, C., & Foxon, C. (2016). Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. physica status solidi (c), 13(5-6), https://doi.org/10.1002/pssc.201510166

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates woul... Read More about Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source.

Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C. R., Whale, J., Kent, A. J., & Foxon, C. T. (2016). Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, 34(2), Article 02L102. https://doi.org/10.1116/1.4940155

Ultraviolet light emitting diodes (UV LEDs) are now being developed for various potential applications including water purification, surface decontamination, optical sensing, and solid-state lighting. The basis for this development is the successful... Read More about Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source.

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range (2015)
Journal Article
Segercrantz, N., Yu, K., Ting, M., Sarney, W., Svensson, S., Novikov, S., …Walukiewicz, W. (in press). Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107(14), Article 142104. https://doi.org/10.1063/1.4932592

In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are in... Read More about Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range.

Anharmonic phonon decay in cubic GaN (2015)
Journal Article
Cuscó, R., Domènech-Amador, N., Novikov, S. V., Foxon, C. T., & Artús, L. (2015). Anharmonic phonon decay in cubic GaN. Physical Review B, 92(7), Article 075206. https://doi.org/10.1103/PhysRevB.92.075206

We present a Raman scattering study of optical phonons in zincblende (cubic) GaN for temperatures ranging from 80 to 750 K. The experiments were performed on high quality, cubic GaN films grown by molecular beamepitaxy on GaAs (001) substrates. The o... Read More about Anharmonic phonon decay in cubic GaN.

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy (2014)
Journal Article
Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. A., & Haigh, S. J. (2014). Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy. Nanotechnology, 25(21), Article 215705. https://doi.org/10.1088/0957-4484/25/21/215705

The composition of InxGa1 − xN nanorods grown by molecular beam epitaxy with nominal x = 0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure with... Read More about Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy.

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs (2008)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., …Brown, P. D. (2008). Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer-Verlag

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark... Read More about Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs.

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux (2005)
Book Chapter
Han, Y., Fay, M. W., Brown, P. D., Novikov, S. V., Edmonds, K., Gallagher, B., …Foxon, C. (2005). Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In A. Cullis, & J. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth... Read More about Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux.

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy (2005)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Wang, K., Gallagher, B., …Brown, P. D. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In A. Cullis, & A. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relat... Read More about Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.