Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

Qian, H.; Lee, K.B.; Vajargah, S.Hosseini; Novikov, S.V.; Guiney, I.; Zhang, S.; Zaidi, Z.H.; Jiang, S.; Wallis, D.J.; Foxon, C.T.; Humphreys, C.J.; Houston, P.A.

Abstract

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×10−4 Ω cm2. An increased gallium beam equivalent pressure during growth produces reduced resistivity but can result in the formation of a polycrystalline structure. The conduction mechanism is found to be influenced by the crystallinity of the structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V) show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias(<0.3 V) and recombination current becomes dominant at higher reverse bias.

Citation

Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zhang, S., Zaidi, Z., Jiang, S., Wallis, D., Foxon, C., Humphreys, C., & Houston, P. (2016). Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31(6), https://doi.org/10.1088/0268-1242/31/6/065020

• Journal Article Type: Article
• Acceptance Date: Apr 28, 2016
• Online Publication Date: May 12, 2016
• Publication Date: Jun 3, 2016
• Deposit Date: Jul 11, 2016
• Publicly Available Date: Jul 11, 2016
• Journal: Semiconductor Science and Technology
• Print ISSN: 0268-1242
• Electronic ISSN: 1361-6641
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 31
• Issue: 6
• DOI: https://doi.org/10.1088/0268-1242/31/6/065020
• Keywords: GaN, PN diode, conduction mechanism, p-type doping, amorphous GaNAs
• Public URL: https://nottingham-repository.worktribe.com/output/796837
• Publisher URL: http://iopscience.iop.org/article/10.1088/0268-1242/31/6/065020/meta
• Contract Date: Jul 11, 2016