SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source
Novikov, Sergei V.; Staddon, C.R.; Sahonta, S-L; Oliver, R.A.; Humphreys, C.J.; Foxon, C.T.
Authors
C.R. Staddon
S-L Sahonta
R.A. Oliver
C.J. Humphreys
C.T. Foxon
Abstract
Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able.
Journal Article Type | Article |
---|---|
Acceptance Date | Feb 4, 2016 |
Online Publication Date | Feb 25, 2016 |
Publication Date | May 1, 2016 |
Deposit Date | Apr 20, 2016 |
Publicly Available Date | Apr 20, 2016 |
Journal | Physica Status Solidi C: Current Topics in Solid State Physics |
Electronic ISSN | 1862-6351 |
Publisher | Wiley |
Peer Reviewed | Peer Reviewed |
Volume | 13 |
Issue | 5-6 |
DOI | https://doi.org/10.1002/pssc.201510166 |
Keywords | Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates |
Public URL | https://nottingham-repository.worktribe.com/output/976829 |
Publisher URL | http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510166/abstract |
Files
Novikov_et_al-2016-physica_status_solidi_(c) (1).pdf
(383 Kb)
PDF
Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
You might also like
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
(2022)
Journal Article
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
(2022)
Journal Article
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
(2021)
Journal Article
Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures
(2021)
Journal Article
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search