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Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Novikov, Sergei V.; Staddon, C.R.; Sahonta, S-L; Oliver, R.A.; Humphreys, C.J.; Foxon, C.T.


C.R. Staddon

S-L Sahonta

R.A. Oliver

C.J. Humphreys

C.T. Foxon


Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able.


Novikov, S. V., Staddon, C., Sahonta, S., Oliver, R., Humphreys, C., & Foxon, C. (2016). Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. physica status solidi (c), 13(5-6),

Journal Article Type Article
Acceptance Date Feb 4, 2016
Online Publication Date Feb 25, 2016
Publication Date May 1, 2016
Deposit Date Apr 20, 2016
Publicly Available Date Apr 20, 2016
Journal Physica Status Solidi C: Current Topics in Solid State Physics
Electronic ISSN 1862-6351
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 13
Issue 5-6
Keywords Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates
Public URL
Publisher URL


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