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Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Novikov, Sergei V.; Staddon, C.R.; Sahonta, S-L; Oliver, R.A.; Humphreys, C.J.; Foxon, C.T.

Authors

C.R. Staddon

S-L Sahonta

R.A. Oliver

C.J. Humphreys

C.T. Foxon



Abstract

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able.

Journal Article Type Article
Publication Date May 1, 2016
Journal Physica Status Solidi C: Current Topics in Solid State Physics
Electronic ISSN 1862-6351
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 13
Issue 5-6
APA6 Citation Novikov, S. V., Staddon, C., Sahonta, S., Oliver, R., Humphreys, C., & Foxon, C. (2016). Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. physica status solidi (c), 13(5-6), https://doi.org/10.1002/pssc.201510166
DOI https://doi.org/10.1002/pssc.201510166
Keywords Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates
Publisher URL http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510166/abstract
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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